參數(shù)資料
型號(hào): K9F2G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 閃存
文件頁(yè)數(shù): 19/38頁(yè)
文件大?。?/td> 601K
代理商: K9F2G08U0M
FLASH MEMORY
19
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
RE
CE
R/B
I/Ox
t
RR
t
CEA
t
REA
t
RP
t
REH
t
REA
t
RC
t
RHZ*
t
REA
Dout
t
OH
Dout
Dout
t
OH
t
RHZ*
t
CHZ*
Serial Access Cycle after Read
(CLE=L, WE=H, ALE=L)
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
RE
CE
R/B
I/Ox
t
RR
t
CEA
t
REA
t
RP
t
REH
t
REA
t
RC
t
RHZ*
t
REA
Dout
t
OH
Dout
Dout
t
OH
t
RHZ*
t
CHZ*
Serial Access Cycle after Read
(CLE=L, WE=H, ALE=L)
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
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