參數(shù)資料
型號： K9F2G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述： 閃存
文件頁數(shù)： 3/38頁
文件大小： 601K
代理商： K9F2G08U0M
FLASH MEMORY
3
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
GENERAL DESCRIPTION
Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300
μ
s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16
device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller
automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
Even the write-intensive systems can take advantage of the K9F2GXXX0M
′
s extended reliability of 100K program/erase cycles by
providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large
nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
Voltage Supply
-1.8V device(K9F2GXXQ0M): 1.70V~1.95V
-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V
Organization
- Memory Cell Array
-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit
-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit
- Data Register
-X8 device(K9F2G08X0M): (2K + 64)bit x8bit
-X16 device(K9F2G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit
-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit
Automatic Program and Erase
- Page Program
-X8 device(K9F2G08X0M) : (2K + 64)Byte
-X16 device(K9F2G16X0M) : (1K + 32)Word
- Block Erase
-X8 device(K9F2G08X0M) : (128K + 4K)Byte
-X16 device(K9F2G16X0M) : (64K + 2K)Word
Page Read Operation
- Page Size
- X8 device(K9F2G08X0M) : 2K-Byte
- X16 device(K9F2G16X0M) : 1K-Word
- Random Read : 25
μ
s(Max.)
- Serial Access : 50ns(Min.)
30ns(Min., K9F2G08U0M only)
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Fast Write Cycle Time
- Page Program time : 300
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
- K9F2GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F2G08Q0M-Y,P
1.70 ~ 1.95V
X8
TSOP1
K9F2G16Q0M-Y,P
X16
K9F2G08U0M-Y,P
2.7 ~ 3.6V
X8
K9F2G16U0M-Y,P
X16
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相關代理商/技術參數(shù)
參數(shù)描述
K9F2G08U0M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9F2G08U0M-PCB0T00 制造商:Samsung Semiconductor 功能描述:
K9F2G08U0M-PIB0000 制造商:Samsung 功能描述:2GB SLC NORMAL X8 TSOP1 - Trays
K9F2G08U0M-YCB0 制造商:Samsung Electro-Mechanics 功能描述:NAND Flash, 256M x 8, 48 Pin, Plastic, TSSOP
K9F2G08UOC-SCBOT00 制造商:Samsung SDI 功能描述:
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