參數(shù)資料
型號: K9F2G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 閃存
文件頁數(shù): 36/38頁
文件大?。?/td> 601K
代理商: K9F2G08U0M
FLASH MEMORY
36
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
cc.
Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9F2GXXU0M).
Figure 16. Power-On Auto-Read
(3.3V device only)
V
CC
CE
CLE
I/O
X
ALE
RE
WE
1st
~ 1.8V
PRE
R/B
2nd
3rd
....
n th
t
R
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