參數(shù)資料
型號(hào): K9F2G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 閃存
文件頁(yè)數(shù): 23/38頁(yè)
文件大小: 601K
代理商: K9F2G08U0M
FLASH MEMORY
23
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
X8 device : m = 2112byte
X16 device : m = 1056word
Page Program Operation
CE
CLE
R/B
WE
ALE
RE
80h
70h
I/O
0
Din
N
1 up to m Byte
Serial Input
Din
M
10h
SerialData
Input Command
Column Address
Row Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
I/Ox
Co.l Add1
Col. Add2
Row Add1
Row Add2 Row Add3
t
ADL
NOTES :
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
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