參數資料
型號: K9F2G08U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes
中文描述: 閃存
文件頁數: 28/38頁
文件大?。?/td> 601K
代理商: K9F2G08U0M
FLASH MEMORY
28
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Read ID Operation
CE
CLE
WE
ALE
RE
90h
Read ID Command
Maker Code Device Code
00h
ECh
Device
Code*
t
REA
Address. 1cycle
XXh
4th cyc.*
ID Definition Table
90 ID : Access command = 90H
Description
1
st
Byte
2
nd
Byte
3
rd
Byte
4
th
Byte
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization
I/Ox
t
AR
Device
Device Code*(2nd Cycle)
4th Cycle*
K9F2G08Q0M
AAh
15h
K9F2G08U0M
DAh
15h
K9F2G16Q0M
BAh
55h
K9F2G16U0M
CAh
55h
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相關代理商/技術參數
參數描述
K9F2G08U0M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9F2G08U0M-PCB0T00 制造商:Samsung Semiconductor 功能描述:
K9F2G08U0M-PIB0000 制造商:Samsung 功能描述:2GB SLC NORMAL X8 TSOP1 - Trays
K9F2G08U0M-YCB0 制造商:Samsung Electro-Mechanics 功能描述:NAND Flash, 256M x 8, 48 Pin, Plastic, TSSOP
K9F2G08UOC-SCBOT00 制造商:Samsung SDI 功能描述: