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參數(shù)資料
| 型號(hào)： | K9F2G08U0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Connector; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 閃存 |
| 文件頁(yè)數(shù)： | 38/38頁(yè) |
| 文件大小： | 601K |
| 代理商： | K9F2G08U0M |
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FLASH MEMORY
38
Preliminary
K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at V
IL
during power-up and power-down. A recovery time of minimum 10
μ
s is required before internal cir-
cuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides
additional software protection.
Figure 18. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
WE
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10
μ
s
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2G16U0M | FLASH MEMORY |
| K9F2G08Q0M | FLASH MEMORY |
| K9F2G16Q0M | FLASH MEMORY |
| K9F5608D0C | TV 37C 37#16 PIN RECP |
| K9F5616D0C | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2G08U0M-PCB000 | 制造商:Samsung Semiconductor 功能描述: |
| K9F2G08U0M-PCB0T00 | 制造商:Samsung Semiconductor 功能描述: |
| K9F2G08U0M-PIB0000 | 制造商:Samsung 功能描述:2GB SLC NORMAL X8 TSOP1 - Trays |
| K9F2G08U0M-YCB0 | 制造商:Samsung Electro-Mechanics 功能描述:NAND Flash, 256M x 8, 48 Pin, Plastic, TSSOP |
| K9F2G08UOC-SCBOT00 | 制造商:Samsung SDI 功能描述: |
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