參數資料
型號: KFG1216U2A-FID6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數: 56/114頁
文件大?。?/td> 1382K
代理商: KFG1216U2A-FID6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
56
The device bus operations are shown in the table below.
Note : L=V
IL
(Low), H=V
IH
(High), X=Don’t Care.
Operation
CE
OE
WE
ADD0~15
DQ0~15
RP
CLK
AVD
Standby
H
X
X
X
High-Z
H
X
X
Warm Reset
X
X
X
X
High-Z
L
X
X
Asynchronous Write
L
H
L
Add. In
Data In
H
L
X
Asynchronous Read
L
L
H
Add. In
Data Out
H
L
or L
Load Initial Burst Address
L
H
H
Add. In
X
H
Burst Read
L
L
H
X
Burst Data
Out
H
Terminate Burst Read
Cycle
H
X
H
X
High-Z
H
X
X
Terminate Burst Read
Cycle via RP
X
X
X
X
High-Z
L
X
X
Terminate Current Burst
Read Cycle and Start
New Burst Read Cycle
H
H
Add In
High-Z
H
X
3.2 Device Bus Operation
相關PDF資料
PDF描述
KFG1G1612M-DEB5 FLASH MEMORY(54MHz)
KFG1G1612M-DED5 FLASH MEMORY(54MHz)
KFW4G16U2M-DID5 FLASH MEMORY(54MHz)
KFW4G16U2M-DID6 FLASH MEMORY(54MHz)
KFW1G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G; Conductor Material:Copper RoHS Compliant: Yes
相關代理商/技術參數
參數描述
KFG1216U2B-DIB6 制造商:Samsung Semiconductor 功能描述:
KFG1216U2M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY