參數(shù)資料
型號: KFG1216U2A-FID6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 9/114頁
文件大?。?/td> 1382K
代理商: KFG1216U2A-FID6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
9
The OneNAND is an advanced generation, high-performance NAND-based Flash memory.
It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page
buffer for the Flash array, and a one-time-programmable block.
The combination of these memory areas enable high-speed pipelining of reads from host
,
BufferRAM
,
Page Buffer
,
and NAND Flash
Array memory.
Clock speeds up to 54MHz with a x16 wide I/O yields a 68MByte/second bandwidth.
The OneNAND also includes a Boot RAM and boot loader. This enables the device to efficiently load boot code at device startup from
the NAND Array without the need for off-chip boot device.
One block of the NAND Array is set aside as an OTP memory area. This area, available to the user, can be configured and locked
with secured user information.
On-chip controller interfaces enable the device to operate in systems without NAND Host controllers.
2.0
DEVICE DESCRIPTION
2.1
Detailed Product Description
相關PDF資料
PDF描述
KFG1G1612M-DEB5 FLASH MEMORY(54MHz)
KFG1G1612M-DED5 FLASH MEMORY(54MHz)
KFW4G16U2M-DID5 FLASH MEMORY(54MHz)
KFW4G16U2M-DID6 FLASH MEMORY(54MHz)
KFW1G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G; Conductor Material:Copper RoHS Compliant: Yes
相關代理商/技術參數(shù)
參數(shù)描述
KFG1216U2B-DIB6 制造商:Samsung Semiconductor 功能描述:
KFG1216U2M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY