參數(shù)資料
型號： KFG1G16Q2M-DEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 71/125頁
文件大?。?/td> 1632K
代理商： KFG1G16Q2M-DEB
OneNAND1G(KFG1G16Q2M-DEB6)
FLASH MEMORY
71
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND4G(KFW4G16Q2M-DEB6)
A block that is in a locked-tight state can only be changed to lock state after a Cold or Warm Reset. Unlock and Lock command
sequences will not affect its state. This is an added level of write protection security.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command. locked-tight blocks
will revert to a locked state following a Cold or Warm Reset.
Lock-Tight Command Sequence:
Start block address+Lock-tight block command (002Ch)
Locked-tight
3.4.4 NAND Flash Array Write Protection State Diagram
Power On
Start block address
+Unlock block Command
RP pin: High
&
Lock block Command
or
RP pin: High
&
Start block address
+Lock-tight block Command
RP pin: High
&
Start block address
Cold reset or
Warm reset
unlock
Lock
Lock
Lock-tight
Lock
Lock
Lock
Cold reset or
Warm reset
3.4.3.3 Locked-tight NAND Array Write Protection State
相關(guān)PDF資料
PDF描述
KFG1G16Q2M-DED FLASH MEMORY
KFG1G16Q2M-DIB FLASH MEMORY
KFG1G16Q2M-DID FLASH MEMORY
KFG2816D1M-PID OneNAND SPECIFICATION
KFG2816U1M-DEB OneNAND SPECIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16Q2M-DEB5000 制造商:Samsung Semiconductor 功能描述:1GB DE-MUXED SLC W/ X16 FBGA - Trays
KFG1G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(66MHz)
KFG1G16Q2M-DEB6000 制造商:Samsung Semiconductor 功能描述:1GB DE-MUXED SLC W/ X16 FBGA - Trays
KFG1G16Q2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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