參數(shù)資料
型號(hào): KFG1G16Q2M-DIB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 120/125頁
文件大?。?/td> 1632K
代理商: KFG1G16Q2M-DIB
OneNAND1G(KFG1G16Q2M-DEB6)
FLASH MEMORY
120
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND4G(KFW4G16Q2M-DEB6)
Because the pull-up resistor value is related to tr(INT) an appropriate value can obtained with the following reference charts.
7.1.3 Determining Rp Value
t
I
Rp(ohm)
Ibusy
tr[us]
KFG1G16Q2M @ Vcc = 1.8V, T
A
= 25
°
C , C
L
= 30pF
1K
10K
20K
30K
0.089
tf[ns]
0.7727
1.345
1.788
3.77
3.77
3.77
3.77
1.75
0.18
0.09
40K
50K
2.142
2.431
3.77
3.77
0.045
0.06
0.036
Open(100K)
5.420
0.000
Busy State
Ready Vcc
V
OH
tf
tr
V
OL
Vss
~50k ohm
INT
Vcc and Vccq
Rp
INT pol = ’High’
t
I
Rp(ohm)
Ibusy
tr[us]
KFW4G16Q2M @ Vcc = 1.8V, T
A
= 25
°
C , C
L
= 30pF
1K
10K
20K
30K
0.232
tf[ns]
1.461
2.08
2.427
6.93
6.93
6.93
6.93
1.77
0.18
0.09
40K
50K
2.65
2.805
6.93
6.93
0.045
0.06
0.036
Open(100K)
5.820
0.000
t
I
Rp(ohm)
Ibusy
tr[us]
KFH2G16Q2M @ Vcc = 1.8V, T
A
= 25
°
C , C
L
= 30pF
1K
10K
20K
30K
0.161
tf[ns]
1.238
1.97
2.458
8.73
8.73
8.73
8.73
1.75
0.18
0.09
40K
50K
2.807
3.07
8.73
8.73
0.045
0.06
0.036
Open(100K)
3.785
0.000
相關(guān)PDF資料
PDF描述
KFG1G16Q2M-DID FLASH MEMORY
KFG2816D1M-PID OneNAND SPECIFICATION
KFG2816U1M-DEB OneNAND SPECIFICATION
KFG2816U1M-DED OneNAND SPECIFICATION
KFG2816U1M-DIB OneNAND SPECIFICATION
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