參數(shù)資料
型號(hào)： KFG1G16Q2M-DIB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 14/125頁
文件大小： 1632K
代理商： KFG1G16Q2M-DIB
OneNAND1G(KFG1G16Q2M-DEB6)
FLASH MEMORY
14
OneNAND2G(KFH2G16Q2M-DEB6)
OneNAND4G(KFW4G16Q2M-DEB6)
2.4 Pin Description
NOTE:
Do not leave power supply(Vcc-Core/Vcc-IO, V
SS
) disconnected.
Pin Name
Type
Nameand Description
Host Interface
A15~A0
I
Address Inputs
- Inputs for addresses during read and write operation, which are for addressing
BufferRAM & Register.
DQ15~DQ0
I/O
Data Inputs/Outputs
- Inputs data during program and commands for all operations, outputs data during memory array/
register read cycles.
Data pins float to high-impedance when the chip is deselected or outputs are disabled.
INT
O
Interrupt
Notifies the Host when a command is completed. It is open drain output with internal
resistor(~50kohms). After power-up, it is at hi-z condition. Once IOBE is set to 1,
it does not float to hi-z condition even when the chip is deselected or when outputs are disabled.
RDY
O
Ready
Indicates data valid in synchronous read modes and is activated while CE is low
CLK
I
Clock
CLK synchronizes the device to the system bus frequency in synchronous read mode.
The first rising edge of CLK in conjunction with AVD low latches address input.
WE
I
Write Enable
WE controls writes to the bufferRAM and registers. Datas are latched on the WE pulse’s rising edge
AVD
I
Address Valid Detect
Indicates valid address presence on address inputs. During asynchronous read operation, all addresses
are latched on AVD’s rising edge, and during synchronous read operation, all addresses are latched on
CLK’s rising edge while AVD is held low for one clock cycle.
> Low : for asynchronous mode, indicates valid address; for burst mode, causes starting address to be
latched on rising edge on CLK
> High : device ignores address inputs
RP
I
Reset Pin
When low, RP resets internal operation of OneNAND. RP status is don’t care during power-up
and bootloading.
CE / CE1
I
Chip Enable
CE-low activates internal control logic, and CE-high deselects the device, places it in standby state,
and places DQ in Hi-Z.
The CE input enables device for Single or DDP .
The CE1 input enables the first DDP device(KFH2G16Q2M) for QDP(KFW4G16Q2M)
CE2
I
Chip Enable
The CE2 input enables the second DDP device(KFH2G16Q2M) for QDP(KFW4G16Q2M)
OE
I
Output Enable
OE-low enables the device’s output data buffers during a read cycle.
Power Supply
V
CC
-Core
/ Vcc
Power for OneNAND Core
This is the power supply for OneNAND Core.
V
CC
-IO
/ Vccq
Power for OneNAND I/O
This is the power supply for OneNAND I/O
Vcc-IO / Vccq is internally separated from Vcc-Core / Vcc.
V
SS
Ground for OneNAND
etc.
DNU
Do Not Use
Leave it disconnected. These pins are used for testing.
NC
No Connection
Lead is not internally connected.
相關(guān)PDF資料
PDF描述
KFG1G16Q2M-DID FLASH MEMORY
KFG2816D1M-PID OneNAND SPECIFICATION
KFG2816U1M-DEB OneNAND SPECIFICATION
KFG2816U1M-DED OneNAND SPECIFICATION
KFG2816U1M-DIB OneNAND SPECIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1G16Q2M-DIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16Q2M-DIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16Q2M-DID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G16Q2M-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16Q2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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