參數(shù)資料
型號: LH28F020SU-N
廠商: Sharp Corporation
英文描述: 2M (256K 】 8) Flash Memory
中文描述: 200萬(256K】8)閃存
文件頁數(shù): 10/31頁
文件大小: 245K
代理商: LH28F020SU-N
LH28F020SU-L
2M (256K × 8) Flash Memory
10
Figure 6. Block Erase with Compatible Status Register
START
BUS
OPERATION
COMMAND
COMMENTS
WRITE 20H
WRITE D0H AND
BLOCK ADDRESS
CSR.7 =
0
NO
YES
1
0
1
0
1
CSR FULL STATUS
CHECK IF DESIRED
OPERATION
COMPLETE
CLEAR CSRD
RETRY/ERROR
RECOVERY
(NOTE)
ERASE
SUCCESSFUL
V
LOW
DETECT
READ CSRD
(see above)
SUSPEND
ERASE
SUSPEND
ERASE LOOP
CSR.4, 5 =
CSR.3 =
Write
Write
Read
Standby
Block Erase
Confirm
D = 20H
A = X
D = D0H
A = BA
Q = CSRD
Toggle CE or OE
to update CSRD.
A = X
Repeat for subsequent Block Erasures.
CSR Full Status Check can be done after each Block Erase,
or after a sequence of Block Erasures.
Write FFH after the last operation to reset
device to read array mode.
See Command Bus Cycle notes for description of codes.
Check CSR.7
1 = WSM Ready
0 = WSM Busy
BUS
OPERATION
COMMAND
CSR FULL STATUS CHECK PROCEDURE
COMMENTS
Standby
Standby
Check CSR.4, 5
1 = Erase Error
0 = Erase Successful
Both 1 = Command
Sequence Error
CSR.3, 4, 5 should be cleared, if set, before further attempts
are initiated.
NOTE:
If CSR.3 (VPPS) is set to '1', after clearing CSR.3/4/5,
1. Issue Reset WP command.
2. Retry Single Block Erase command.
3. Set WP command is issued, if necessary.
If CSR.3 (VPPS) is set to '0', after clearing CSR.3/4/5,
1. Retry Single Block Erase command.
Where power off or chip reset during erase operation,
1. Clear CSR.3/4/5 and issue Reset WP command,
2. Retry Single Block Erase command.
3. Set WP command is issued, if necessary.
28F020SUL15-5
READ COMPATIBLE
STATUS REGISTER
Check CSR.3
1 = V
PP
Low Detect
0 = V
PP
OK
相關(guān)PDF資料
PDF描述
LH28F040SUTD-Z4 4M (512K 】 8) Flash Memory
LH28F160BHE-TTL90 16M (x8/x16) Flash Memory
LH28F160BJE-BTL90 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
LH28F160BJE-TTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
LH28F160BJHE-BTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F020SUN-L12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
LH28F032SUTD-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM Module
LH28F040SUTD-Z4 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
LH28F0I6SCT-L95 制造商:Sharp Microelectronics Corporation 功能描述:
LH28F128BFHT-PBTL75A 功能描述:閃存 128Mb (x16)3V OTP Single Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel