參數(shù)資料
型號(hào)： LH28F020SU-N
廠商： Sharp Corporation
英文描述： 2M (256K 】 8) Flash Memory
中文描述： 200萬(wàn)（256K】8）閃存
文件頁(yè)數(shù)： 8/31頁(yè)
文件大?。?/td> 245K
代理商： LH28F020SU-N
LH28F020SU-L
2M (256K × 8) Flash Memory
8
2M FLASH MEMORY
SOFTWARE ALGORITHMS
Overview
With the advanced Command User Interface, its Per-
formance Enhancement commands and Status Regis-
ters, the software code required to perform a given
operation may become more intensive but it will result
in much higher write/erase performance compared with
current flash memory architectures.
The software flow charts describing how a given
operation proceeds are shown here. Figure 5 through
Figure 7 depict flowcharts using the second generation
flash device in the LH28F008SA compatible mode.
Figure 8 through Figure 14 depict flowcharts using the
second generation flash device’s performance enhance-
ment commands mode.
When the device power-up or reset is completed, all
blocks come up locked. Therefore, Byte Write, Two Byte
Serial Write and Block Erase cannot be performed in
each block. However, at that time, Erase All Unlocked
Block is performed normally, if used, and reflect actual
lock status, also the unlocked block data is erased. When
the device power-up or reset is completed, Set Write
Protect command must be written to reflect actual block
lock status.
Reset Write Protect command must be written be-
fore Write Block Lock command. To reflect actual block
lock status, Set Write Protect command is succeeded.
The Compatible Status Register (CSR) is used to
determine which blocks are locked. In order to see Lock
Status of certain block, a Byte Write command (WA =
Block Address, WD = FFH) is written to the CUI, after
issuing Set Write Protect command. If CSR.7, CSR.5
and CSR.4 (WSMS, ES and DWS) are set to ‘1’s, the
block is locked. If CSR.7 is set to ‘1’, the block is not
locked.
Reset Write Protect command enables Write/Erase
operation to each block.
In the case of Block Erase is performed, the block
lock information is also erased. Block Lock command
and Set Write Protect command must be written to pro-
hibit Write/Erase operations to each block.
There are unassigned commands. It is not recom-
mended that the customer use any command other than
the valid commands specified in “Command Bus Defi-
nitions”. Sharp reserves the right to redefine these codes
for future functions.
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LH28F128BFHT-PBTL75A 功能描述:閃存 128Mb (x16)3V OTP Single Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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