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參數資料
| 型號： | LH28F020SU-N |
| 廠商： | Sharp Corporation |
| 英文描述： | 2M (256K 】 8) Flash Memory |
| 中文描述： | 200萬（256K】8）閃存 |
| 文件頁數： | 3/31頁 |
| 文件大小： | 245K |
| 代理商： | LH28F020SU-N |
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2M (256K × 8) Flash Memory
LH28F020SU-L
3
SIGNAL
TYPE
NAME AND FUNCTION
A
0
- A
13
INPUT
BYTE-SELECT ADDRESSES
: Select a byte within one 16K block. These
addresses are latched during Data Writes.
A
14
- A
17
INPUT
BLOCK-SELECT ADDRESSES
: Select 1 of 16 Erase Blocks. These addresses
are latched during Data Writes, Erase and Lock-Block operations.
DQ
0
- DQ
7
INPUT/OUTPUT
DATA INPUT/OUTPUT:
Inputs data and commands during CUI write cycles.
Outputs array, buffer, identifier or status data in the appropriate Read mode.
Floated when the chip is de-selected or the outputs are disabled.
CE
INPUT
CHIP ENABLE INPUTS
: Activate the device's control logic, input buffers,
decoders and sense amplifiers.
CE
must be low to select the device.
OE
INPUT
OUTPUT ENABLE
: Gates device data through the output buffers when low. The
outputs float to tri-state off when
OE
is high.
WE
INPUT
WRITE ENABLE:
Controls access to the CUI, Page Buffers, Data Queue
Registers and Address Queue Latches. WE is active low, and latches both
address and data (command or array) on its rising edge.
V
PP
SUPPLY
ERASE/WRITE POWER SUPPLY (5.0 V ±0.5 V)
: For erasing memory array
blocks or writing bytes into the flash array.
V
CC
SUPPLY
DEVICE POWER SUPPLY (3.3 V ±0.3 V)
: Do not leave any power pins floating.
GND
SUPPLY
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
INTRODUCTION
Sharp’s LH28F020SU-L 2M Flash Memory is a revo-
lutionary architecture which enables the design of truly
mobile, high performance, personal computing and com-
munication products. With innovative capabilities, 3.3 V
low power operation and very high read/write perfor-
mance, the LH28F020SU-L is also the ideal choice for
designing embedded mass storage flash memory
systems.
The LH28F020SU-L is a very high density, highest
performance non-volatile read/write solution for solid-
state storage applications. Its independently lockable
16 symmetrical blocked architecture (16K each)
extended cycling, low power operation, very fast write
and read performance and selective block locking pro-
vide a highly flexible memory component suitable for
high density memory cards, Resident Flash Arrays and
PCMCIA-ATA Flash Drives. The LH28F020SU’s
5.0 V/3.3 V power supply operation enables the design
of memory cards which can be read in 3.3 V system
and written in 5.0 V/3.3 V systems. Its x8 architecture
allows the optimization of memory to processor inter-
face. The flexible block locking option enables bundling
of executable application software in a Resident Flash
Array or memory card. Manufactured on Sharp’s 0.55
μm ETOX process technology, the LH28F020SU-L is
the most cost-effective, high density 3.3 V flash memory.
Description
The LH28F020SU-L is a high performance 2M
(2,097,152 bit) block erasable non-volatile random
access memory organized as 256K × 8. The
LH28F020SU-L includes sixteen 16K (16,384) blocks.
A chip memory map is shown in Figure 4.
The implementation of a new architecture, with many
enhanced features, will improve the device operating
characteristics and results in greater product reliability
and ease of use.
Among the significant enhancements of the
LH28F020SU-L:
3 V Read, 5 V Write/Erase Operation
(5 V V
PP
, 3 V V
CC
)
Lower Power Capability (2.7 V V
CC
Read)
Improved Write Performance
Dedicated Block Write/Erase Protection
Command-Controlled Memory Protection
Set/Reset Capability
The LH28F020SUN-L12 will be available in a 32-pin,
525 mil. SOP package. This form factor and pinout al-
low for very high board layout densities.
PIN DESCRIPTION
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| LH28F160BJE-BTL90 | 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器) |
| LH28F160BJE-TTL70 | 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器) |
| LH28F160BJHE-BTL70 | 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LH28F020SUN-L12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| LH28F032SUTD-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM Module |
| LH28F040SUTD-Z4 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory |
| LH28F0I6SCT-L95 | 制造商:Sharp Microelectronics Corporation 功能描述: |
| LH28F128BFHT-PBTL75A | 功能描述:閃存 128Mb (x16)3V OTP Single Supply RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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