參數(shù)資料
型號(hào)： LH28F020SU-N
廠商： Sharp Corporation
英文描述： 2M (256K 】 8) Flash Memory
中文描述： 200萬（256K】8）閃存
文件頁數(shù)： 6/31頁
文件大?。?/td> 245K
代理商： LH28F020SU-N
LH28F020SU-L
2M (256K × 8) Flash Memory
6
COMMAND
FIRST BUS CYCLE
SECOND BUS CYCLE
NOTE
OPER.
ADDRESS
DATA
OPER.
ADDRESS
DATA
Read Array
Write
X
FFH
Read
AA
AD
Intelligent Identifier
Write
X
90H
Read
IA
ID
1
Read Compatible Status Register
Write
X
70H
Read
X
CSRD
2
Clear Status Register
Write
X
50H
3
Byte Write
Write
X
40H
Write
WA
WD
Alternate Byte Write
Write
X
10H
Write
WA
WD
Block Erase/Confirm
Write
X
20H
Write
BA
D0H
4
Erase Suspend/Resume
Write
X
B0H
Write
X
D0H
4
LH28F008SA - Compatible Mode Command Bus Definitions
ADDRESS
AA = Array Address
BA = Block Address
IA = Identifier Address
WA = Write Address
X = Don’t Care
DATA
AD = Array Data
CSRD = CSR Data
ID = Identifier Data
WD = Write Data
NOTES:
1. Following the intelligent identifier command, two Read operations access the manufacturer and device signature codes.
2. The CSR is automatically available after device enters Data Write, Erase or Suspend operations.
3. Clears CSR.3, CSR.4, and CSR.5. See Status register definitions.
4. While device performs Block Erase, if you issue Erase Suspend command (B0H), be sure to confirm ESS (Erase-Suspend-Status) is
set to 1 on compatible status register. In the case, ESS bit was not set to 1, also completed the Erase (ESS = 0, WSMS = 1), be sure
to issue Resume command (D0H) after completed next Erase command. Beside, when the Erase Suspend command is issued, while
the device is not in Erase, be sure to issue Resume command (D0H) after the next erase complete.
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參數(shù)描述
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LH28F040SUTD-Z4 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8) Flash Memory
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LH28F128BFHT-PBTL75A 功能描述:閃存 128Mb (x16)3V OTP Single Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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