參數(shù)資料
型號： LH28F160BHE-TTL90
廠商： Sharp Corporation
英文描述： 16M (x8/x16) Flash Memory
中文描述： 1,600（x8/x16）閃存
文件頁數(shù)： 11/46頁
文件大?。?/td> 679K
代理商： LH28F160BHE-TTL90
(Parameter Blocks 1 through 4)
FCFFF
F9000
[A
19
-A
0
]
*
FEFFF
FE002
FE001
FE000
Boot Block 1
Reserved for Future Implementation
Reserved for Future Implementation
Boot Block 1 Lock Configuration Code
FE003
F8FFF
F8002
F8001
F8000
F8003
Parameter Block 5
Reserved for Future Implementation
Reserved for Future Implementation
Parameter Block 5 Lock Configuration Code
FDFFF
FD002
FD001
FD000
FD003
Parameter Block 0
Reserved for Future Implementation
Reserved for Future Implementation
Parameter Block 0 Lock Configuration Code
(Main Blocks 1 through 29)
EFFFF
08000
F7FFF
F0002
F0001
F0000
F0003
Main Block 0
Reserved for Future Implementation
Reserved for Future Implementation
Main Block 0 Lock Configuration Code
Top Boot
FFFFF
FF002
FF001
FF000
Boot Block 0
Reserved for Future Implementation
Reserved for Future Implementation
Boot Block 0 Lock Configuration Code
FF003
07FFF
00004
00002
00000
Device Code
Manufacturer CodeMain Block 30
*
: Address A
-1
don’t care.
Main Block 30 Lock Configuration Code
Reserved for Future Implementation
00003
00001
Permanent Lock Configuration Code
LHF16J04
9
Rev. 1.26
3.5 Read Identifier Codes
The read identifier codes operation outputs the
manufacturer code, device code, block lock configuration
codes for each block and the permanent lock configuration
code (see Figure 4). Using the manufacturer and device
codes, the system CPU can automatically match the device
with its proper algorithms. The block lock and permanent
lock configuration codes identify locked and unlocked
blocks and permanent lock-bit setting.
3.6 Write
Writing commands to the CUI enable reading of device
data and identifier codes. They also control inspection and
clearing of the status register. When V
CC
=2.7V-3.6V and
V
CCW
=V
CCWH1/2
, the CUI additionally controls block
erase, full chip erase, word/byte write and lock-bit
configuration.
The Block Erase command requires appropriate command
data and an address within the block to be erased. The Full
Chip Erase command requires appropriate command data
and an address within the device. The Word/Byte Write
command requires the command and address of the
location to be written. Set Permanent and Block Lock-Bit
commands require the command and address within the
device (Permanent Lock) or block within the device
(Block Lock) to be locked. The Clear Block Lock-Bits
command requires the command and address within the
device.
The CUI does not occupy an addressable memory
location. It is written when WE# and CE# are active. The
address and data needed to execute a command are latched
on the rising edge of WE# or CE# (whichever goes high
first). Standard microprocessor write timings are used.
Figures 16 and 17 illustrate WE# and CE# controlled write
operations.
4 COMMAND DEFINITIONS
When the V
CCW
voltage
≤
V
CCWLK
, read operations from
the status register, identifier codes, or blocks are enabled.
Placing V
CCWH1/2
on V
CCW
enables successful block
erase, full chip erase, word/byte write and lock-bit
configuration operations.
Device operations are selected by writing specific
commands into the CUI. Table 3 defines these commands.
Figure 4. Device Identifier Code Memory Map
相關(guān)PDF資料
PDF描述
LH28F160BJE-BTL90 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
LH28F160BJE-TTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
LH28F160BJHE-BTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器)
LH28F160BJHE-TTL90 16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M位( 1M位 x16 / 2M位 x8 )Boot Block 閃速存儲器)
LH28F160BVE-BTL90 16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M位(2M位x8/1M位 x16)Boot Block 閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F160BJB-BTL90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJB-TTL90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJB-TTLZS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJE-BTL90 功能描述:IC FLASH 16MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
LH28F160BJE-TTL90 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP
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