參數(shù)資料
型號(hào)： LH28F160BHE-TTL90
廠(chǎng)商： Sharp Corporation
英文描述： 16M (x8/x16) Flash Memory
中文描述： 1,600（x8/x16）閃存
文件頁(yè)數(shù)： 9/46頁(yè)
文件大?。?/td> 679K
代理商： LH28F160BHE-TTL90
Top Boot
32KW/64KB Main Block 14
32KW/64KB Main Block 13
32KW/64KB Main Block 12
32KW/64KB Main Block 11
32KW/64KB Main Block 10
32KW/64KB Main Block 9
32KW/64KB Main Block 8
32KW/64KB Main Block 7
32KW/64KB Main Block 6
32KW/64KB Main Block 5
32KW/64KB Main Block 4
32KW/64KB Main Block 3
32KW/64KB Main Block 2
32KW/64KB Main Block 1
32KW/64KB Main Block 0
4KW/8KB Boot Block 0
4KW/8KB Boot Block 1
4KW/8KB Parameter Block 0
4KW/8KB Parameter Block 1
4KW/8KB Parameter Block 2
4KW/8KB Parameter Block 3
4KW/8KB Parameter Block 4
4KW/8KB Parameter Block 5
32KW/64KB Main Block 15
32KW/64KB Main Block 16
32KW/64KB Main Block 17
32KW/64KB Main Block 18
32KW/64KB Main Block 19
32KW/64KB Main Block 20
32KW/64KB Main Block 21
32KW/64KB Main Block 22
32KW/64KB Main Block 23
32KW/64KB Main Block 24
32KW/64KB Main Block 25
32KW/64KB Main Block 26
32KW/64KB Main Block 27
32KW/64KB Main Block 28
32KW/64KB Main Block 29
32KW/64KB Main Block 30
FFFFF
FF000
FE000
FD000
FC000
FBFFF
FB000
FAFFF
FA000
F9000
F8000
F0000
EFFFF
E8000
E7FFF
E0000
DFFFF
D8000
D0000
C8000
C0000
BFFFF
B8000
B7FFF
80000
88000
B0000
A8000
A0000
98000
97FFF
90000
58000
5FFFF
78000
77FFF
70000
6FFFF
68000
60000
30000
38000
50000
4FFFF
48000
40000
08000
10000
28000
20000
18000
00000
[A
19
-A
0
]
[A
19
-A
-1
]
1FFFFF
1FE000
1FDFFF
1FC000
1FA000
1F8000
1F7FFF
1F6000
1F5FFF
1F4000
1F2000
1F0000
1E0000
1D0000
1CFFFF
1C0000
1B0000
1A0000
190000
180000
170000
16FFFF
100000
160000
150000
140000
130000
12FFFF
120000
10FFFF
0B0000
0BFFFF
0F0000
0E0000
0DFFFF
0D0000
0C0000
060000
06FFFF
0A0000
09FFFF
090000
080000
070000
010000
050000
04FFFF
040000
030000
01FFFF
000000
LHF16J04
7
Rev. 1.26
2 PRINCIPLES OF OPERATION
The LH28F160BJHE-TTL90 flash memory includes an
on-chip WSM to manage block erase, full chip erase,
word/byte write and lock-bit configuration functions. It
allows for: 100% TTL-level control inputs, fixed power
supplies during block erase, full chip erase, word/byte
write and lock-bit configuration, and minimal processor
overhead with RAM-like interface timings.
After initial device power-up or return from reset mode
(see section 3 Bus Operations), the device defaults to read
array mode. Manipulation of external memory control pins
allow array read, standby and output disable operations.
Status register and identifier codes can be accessed
through the CUI independent of the V
CCW
voltage. High
voltage on V
CCW
enables successful block erase, full chip
erase, word/byte write and lock-bit configurations. All
functions associated with altering memory contentsblock
erase, full chip erase, word/byte write, lock-bit
configuration, status and identifier codesare accessed via
the CUI and verified through the status register.
Commands are written using standard microprocessor
write timings. The CUI contents serve as input to the
WSM, which controls the block erase, full chip erase,
word/byte write and lock-bit configuration. The internal
algorithms are regulated by the WSM, including pulse
repetition, internal verification and margining of data.
Addresses and data are internally latched during write
cycles. Writing the appropriate command outputs array
data, accesses the identifier codes or outputs status register
data.
Interface software that initiates and polls progress of block
erase, full chip erase, word/byte write and lock-bit
configuration can be stored in any block. This code is
copied to and executed from system RAM during flash
memory updates. After successful completion, reads are
again possible via the Read Array command. Block erase
suspend allows system software to suspend a block erase
to read/write data from/to blocks other than that which is
suspend. Word/byte write suspend allows system software
to suspend a word/byte write to read data from any other
flash memory array location.
Figure 3. Memory Map
相關(guān)PDF資料
PDF描述
LH28F160BJE-BTL90 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJE-TTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJHE-BTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJHE-TTL90 16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M位( 1M位 x16 / 2M位 x8 )Boot Block 閃速存儲(chǔ)器)
LH28F160BVE-BTL90 16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M位(2M位x8/1M位 x16)Boot Block 閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F160BJB-BTL90 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Flash ROM
LH28F160BJB-TTL90 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Flash ROM
LH28F160BJB-TTLZS 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Flash ROM
LH28F160BJE-BTL90 功能描述:IC FLASH 16MBIT 90NS 48TSOP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán)
LH28F160BJE-TTL90 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP
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