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參數(shù)資料
| 型號： | LH28F160BHE-TTL90 |
| 廠商： | Sharp Corporation |
| 英文描述： | 16M (x8/x16) Flash Memory |
| 中文描述： | 1,600（x8/x16）閃存 |
| 文件頁數(shù)： | 28/46頁 |
| 文件大小： | 679K |
| 代理商： | LH28F160BHE-TTL90 |
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LHF16J04
26
Rev. 1.26
5.6 Power-Up/Down Protection
The device is designed to offer protection against
accidental block erase, full chip erase, word/byte write or
lock-bit configuration during power transitions. Upon
power-up, the device is indifferent as to which power
supply (V
CCW
or V
CC
) powers-up first. Internal circuitry
resets the CUI to read array mode at power-up.
A system designer must guard against spurious writes for
V
CC
voltages above V
LKO
when V
CCW
is active. Since
both WE# and CE# must be low for a command write,
driving either to V
IH
will inhibit writes. The CUI’s two-
step command sequence architecture provides added level
of protection against data alteration.
In-system block lock and unlock capability prevents
inadvertent data alteration. The device is disabled while
RP#=V
IL
regardless of its control inputs state.
5.7 Power Dissipation
When designing portable systems, designers must consider
battery power consumption not only during device
operation, but also for data retention during system idle
time. Flash memory’s nonvolatility increases usable
battery life because data is retained when system power is
removed.
5.8 Data Protection Method
Noises having a level exceeding the limit specified in the
specification may be generated under specific operating
conditions on some systems. Such noises, when induced
onto WE# signal or power supply, may be interpreted as
false commands, causing undesired memory updating. To
protect the data stored in the flash memory against
unwanted overwriting, systems operating with the flash
memory should have the following write protect designs,
as appropriate:
1) Protecting data in specific block
When a lock bit is set, the corresponding block (includes
the 2 boot blocks) is protected against overwriting. By
setting a WP# to low, only the 2 boot blocks can be
protected against overwriting. By using this feature, the
flash memory space can be divided into the program
section (locked section) and data section (unlocked
section). The permanent lock bit can be used to prevent
false block bit setting. For further information on
setting/resetting lock-bit, refer to the specification. (See
chapter 4.10 and 4.11.)
2) Data protection through V
CCW
When the level of V
CCW
is lower than V
CCWLK
(lockout
voltage), write operation on the flash memory is disabled.
All blocks are locked and the data in the blocks are
completely write protected. For the lockout voltage, refer
to the specification. (See chapter 6.2.3.)
3) Data protection through RP#
When the RP# is kept low during read mode, the flash
memory will be reset mode, then write protecting all
blocks. When the RP# is kept low during power up and
power down sequence such as voltage transition, write
operation on the flash memory is disabled, write
protecting all blocks. For the details of RP# control, refer
to the specification. (See chapter 5.6 and 6.2.7.)
相關PDF資料 |
PDF描述 |
|---|---|
| LH28F160BJE-BTL90 | 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器) |
| LH28F160BJE-TTL70 | 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器) |
| LH28F160BJHE-BTL70 | 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲器) |
| LH28F160BJHE-TTL90 | 16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M位( 1M位 x16 / 2M位 x8 )Boot Block 閃速存儲器) |
| LH28F160BVE-BTL90 | 16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M位(2M位x8/1M位 x16)Boot Block 閃速存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160BJB-BTL90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJB-TTL90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJB-TTLZS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJE-BTL90 | 功能描述:IC FLASH 16MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| LH28F160BJE-TTL90 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP |
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