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參數(shù)資料
| 型號(hào)： | LH28F160BHE-TTL90 |
| 廠商： | Sharp Corporation |
| 英文描述： | 16M (x8/x16) Flash Memory |
| 中文描述： | 1,600（x8/x16）閃存 |
| 文件頁(yè)數(shù)： | 32/46頁(yè) |
| 文件大?。?/td> | 679K |
| 代理商： | LH28F160BHE-TTL90 |
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LHF16J04
30
Rev. 1.26
DC Characteristics (Continued)
V
CC
=2.7V-3.6V
Min.
-0.5
Sym.
V
IL
V
IH
Parameter
Notes
7
7
Max.
0.8
V
CC
+0.5
Unit
V
Test Conditions
Input Low Voltage
Input High Voltage
2.0
V
V
OL
Output Low Voltage
3,7
0.4
V
V
CC
=V
CC
Min.
I
OL
=2.0mA
V
CC
=V
CC
Min.
I
OH
=-2.0mA
V
CC
=V
CC
Min.
I
OH
=-2.5mA
V
CC
=V
CC
Min.
I
OH
=-100μA
V
OH1
Output High Voltage
(TTL)
Output High Voltage
(CMOS)
7
2.4
V
V
OH2
7
0.85
V
CC
V
CC
-0.4
V
V
V
CCWLK
V
CCW
Lockout during Normal
Operations
V
CCWH1
V
CCW
during Block Erase, Full Chip
Erase, Word/Byte Write or Lock-Bit
Configuration Operations
V
CCWH2
V
CCW
during Block Erase, Full Chip
Erase, Word/Byte Write or Lock-Bit
Configuration Operations
V
LKO
V
CC
Lockout Voltage
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
voltage and T
A
=+25°C.
2. I
CCWS
and I
CCES
are specified with the device de-selected. If read or word/byte written while in erase suspend mode, the
device’s current draw is the sum of I
CCWS
or I
CCES
and I
CCR
or I
CCW
, respectively.
3. Includes RY/BY#.
4. Block erases, full chip erase, word/byte writes and lock-bit configurations are inhibited when V
CCW
≤
V
CCWLK
, and not
guaranteed in the range between V
CCWLK
(max.) and V
CCWH1
(min.), between V
CCWH1
(max.) and V
CCWH2
(min.) and
above V
CCWH2
(max.).
5. The Automatic Power Savings (APS) feature is placed automatically power save mode that addresses not switching more
than 300ns while read mode.
6. About all of pin except describe Test Conditions, CMOS level inputs are either V
CC
±0.2V or GND±0.2V, TTL level
inputs are either V
IL
or V
IH
.
7. Sampled, not 100% tested.
8. Applying 12V±0.3V to V
CCW
during erase/write can only be done for a maximum of 1000 cycles on each block. V
CCW
may be connected to 12V±0.3V for a total of 80 hours maximum.
4,7
1.0
V
2.7
3.6
V
8
11.7
12.3
V
2.0
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160BJB-BTL90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJB-TTL90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJB-TTLZS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F160BJE-BTL90 | 功能描述:IC FLASH 16MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH28F160BJE-TTL90 | 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP |
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