參數(shù)資料
型號(hào)： LH28F160BHE-TTL90
廠商： Sharp Corporation
英文描述： 16M (x8/x16) Flash Memory
中文描述： 1,600（x8/x16）閃存
文件頁(yè)數(shù)： 5/46頁(yè)
文件大?。?/td> 679K
代理商： LH28F160BHE-TTL90
LHF16J04
3
Rev. 1.26
1 INTRODUCTION
This
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4 and 5 describe the memory
organization and functionality. Section 6 covers electrical
specifications.
datasheet
contains
LH28F160BJHE-TTL90
1.1 Features
Key enhancements of LH28F160BJHE-TTL90 boot block
Flash memory are:
Single low voltage operation
Low power consumption
Enhanced Suspend Capabilities
Boot Block Architecture
Please note following:
V
CCWLK
has been lowered to 1.0V to support 2.7V-
3.6V block erase, full chip erase, word/byte write and
lock-bit configuration operations. The V
CCW
voltage
transitions to GND is recommended for designs that
switch V
CCW
off during read operation.
1.2 Product Overview
The LH28F160BJHE-TTL90 is a high-performance 16M-
bit Boot Block Flash memory organized as 1M-word of 16
bits or 2M-byte of 8 bits. The 1M-word/2M-byte of data is
arranged in two 4K-word/8K-byte boot blocks, six 4K-
word/8K-byte parameter blocks and thirty-one 32K-
word/64K-byte main blocks which are individually
erasable, lockable and unlockable in-system. The memory
map is shown in Figure 3.
The dedicated V
CCW
pin gives complete data protection
when V
CCW
≤
V
CCWLK
.
A Command User Interface (CUI) serves as the interface
between the system processor and internal operation of the
device. A valid command sequence written to the CUI
initiates device automation. An internal Write State
Machine (WSM) automatically executes the algorithms
and timings necessary for block erase, full chip erase,
word/byte write and lock-bit configuration operations.
A block erase operation erases one of the device’s 32K-
word/64K-byte blocks typically within 1.2s (3V V
CC
, 3V
V
CCW
), 4K-word/8K-byte blocks typically within 0.6s (3V
V
CC
, 3V V
CCW
) independent of other blocks. Each block
can be independently erased minimum 100,000 times.
Block erase suspend mode allows system software to
suspend block erase to read or write data from any other
block.
Writing memory data is performed in word/byte
increments of the device’s 32K-word blocks typically
within 33μs (3V V
CC
, 3V V
CCW
), 64K-byte blocks
typically within 31μs (3V V
CC
, 3V V
CCW
), 4K-word
blocks typically within 36μs (3V V
CC
, 3V V
CCW
), 8K-
byte blocks typically within 32μs (3V V
CC
, 3V V
CCW
).
Word/byte write suspend mode enables the system to read
data or execute code from any other flash memory array
location.
Individual block locking uses a combination of bits, thirty-
nine block lock-bits, a permanent lock-bit and WP# pin, to
lock and unlock blocks. Block lock-bits gate block erase,
full chip erase and word/byte write operations, while the
permanent lock-bit gates block lock-bit modification and
locked
block
alternation.
operations (Set Block Lock-Bit, Set Permanent Lock-Bit
and Clear Block Lock-Bits commands) set and cleared
lock-bits.
Lock-bit
configuration
The status register indicates when the WSM’s block erase,
full chip erase, word/byte write or lock-bit configuration
operation is finished.
The RY/BY# output gives an additional indicator of WSM
activity by providing both a hardware signal of status
(versus software polling) and status masking (interrupt
masking for background block erase, for example). Status
polling using RY/BY# minimizes both CPU overhead and
system power consumption. When low, RY/BY# indicates
that the WSM is performing a block erase, full chip erase,
word/byte write or lock-bit configuration. RY/BY#-high Z
indicates that the WSM is ready for a new command,
block erase is suspended (and word/byte write is
inactive), word/byte write is suspended, or the device is in
reset mode.
相關(guān)PDF資料
PDF描述
LH28F160BJE-BTL90 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJE-TTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJHE-BTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJHE-TTL90 16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M位( 1M位 x16 / 2M位 x8 )Boot Block 閃速存儲(chǔ)器)
LH28F160BVE-BTL90 16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M位(2M位x8/1M位 x16)Boot Block 閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F160BJB-BTL90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJB-TTL90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJB-TTLZS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJE-BTL90 功能描述:IC FLASH 16MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
LH28F160BJE-TTL90 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP
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