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參數(shù)資料
| 型號： | LH28F800SG-L10 |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| 中文描述： | 8 M位（512 KB的× 16）SmartVoltage閃存 |
| 文件頁數(shù)： | 38/45頁 |
| 文件大?。?/td> | 328K |
| 代理商： | LH28F800SG-L10 |
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LH28F800SG-L/SGH-L (FOR TSOP, CSP)
- 38 -
SYMBOL
t
AVAV
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
80
MAX.
MIN.
100
MAX.
Write Cycle Time
RP# High Recovery to CE#
Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
RP# V
HH
Setup to CE# Going High
V
PP
Setup to CE# Going High
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD,
RY/BY# High
RP# V
HH
Hold from Valid SRD,
RY/BY# High
NOTES :
1.
In systems where CE# defines the write pulse width
(within a longer WE# timing waveform), all setup, hold,
and inactive WE# times should be measured relative to
the CE# waveform.
2.
Sampled, not 100% tested.
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
word write, or lock-bit configuration.
4.
V
PP
should be held at V
PPH1/2/3
(and if necessary RP#
should be held at V
HH
) until determination of block erase,
word write, or lock-bit configuration success (SR.1/3/4/5 = 0).
ns
t
PHEL
2
1
1
1
μs
t
WLEL
t
ELEH
t
PHHEH
t
VPEH
t
AVEH
t
DVEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHRL
t
EHGL
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
3
3
90
90
90
0
0
0
t
QVVL
2, 4
0
0
0
ns
t
QVPH
2, 4
0
0
0
ns
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 5)
LH28F800SG-L70
LH28F800SGH-L70
(NOTE 6)
LH28F800SG-L10
LH28F800SGH-L10
(NOTE 6)
LH28F800SG-L70
LH28F800SGH-L70
UNIT
5.
See
Fig. 10 "Transient Input/Output Reference
Waveform"
and
Fig. 12 "Transient Equivalent Testing
Load Circuit"
(High Speed Configuration) for testing
characteristics.
See
Fig. 11 "Transient Input/Output Reference
Waveform"
and
Fig. 12 "Transient Equivalent Testing
Load Circuit"
(Standard Configuration) for testing
characteristics.
6.
6.2.6 AC CHARACTERISTICS FOR CE#-CONTROLLED WRITE OPERATIONS (contd.)
(NOTE 1)
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
= 0 to +70C or –40 to +85
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F800SUT-70 | 8M (512K 】 16, 1M 】 8) Flash Memory |
| LH28F800BGR-BL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-BL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-TL12 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-TL85 | 8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800SG-L70 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800SGN-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGN-L70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800SGR-L10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
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