參數(shù)資料
型號: LH28F800SG-L10
廠商: Sharp Corporation
英文描述: 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
中文描述: 8 M位(512 KB的× 16)SmartVoltage閃存
文件頁數(shù): 18/45頁
文件大?。?/td> 328K
代理商: LH28F800SG-L10
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
- 18 -
Block Erase
Complete
Start
Write 20H,
Block Address
Write D0H,
Block Address
Read
Status Register
0
SR.7 =
1
Full Status
Check if Desired
Repeat for subsequent block erasures.
Full status check can be done after each block erase or after
a sequence of block erasures.
Write FFH after the last block erase operation to place device
in read array mode.
BUS
OPERATION
Write
Write
Read
Standby
COMMAND
Erase Setup
COMMENTS
Data = 20H
Addr = Within Block to be Erased
Data = D0H
Addr = Within Block to be Erased
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
SR.3 =
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
V
PP
Range Error
1
0
SR.1 =
Device Protect Error
1
0
BUS
OPERATION
COMMAND
COMMENTS
Standby
Standby
Check SR.1
1 = Device Protect Detect
RP# = V
IH
, Block Lock-Bit is Set
Only required for systems
implementing lock-bit configuration
Check SR.5
1 = Block Erase Error
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear
Status Register command in cases where multiple blocks
are erased before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
No
Suspend
Block Erase
Yes
Suspend Block
Erase Loop
Erase
Confirm
Block Erase
Successful
SR.4, 5 =
Command Sequence
Error
1
0
SR.5 =
Block Erase
Error
1
0
Standby
Check SR.3
1 = V
PP
Error Detect
Standby
Check SR.4, 5
Both 1 = Command Sequence Error
Fig. 3 Automated Block Erase Flowchart
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