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參數(shù)資料
| 型號： | LTE42012R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 72K |
| 代理商： | LTE42012R |
1997 Feb 21
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42012R
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistor provides excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Input matching cell improves input impedance and
allows an easier design of wideband circuits.
APPLICATIONS
Common emitter class-A power amplifiers up to 4.2 GHz
in CW conditions for military and professional
applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
PINNING - SOT440A
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
Marking code
: 198
olumns
e
c
b
MAM131
3
1
2
Top view
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A selective amplifier.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
≥
1
G
po
(dB)
≥
6
Z
i
(
)
Z
L
(
)
4
j8
Class-A (CW)
4.2
16
400
7.5 + j12
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LTE4206 | 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES |
| LTE-4206 | 功能描述:紅外發(fā)射源 Infrared 940nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| LTE-4206_1 | 制造商:LITEON 制造商全稱:Lite-On Technology Corporation 功能描述:PHOTOTRANSISTOR |
| LTE4206C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| LTE-4206C | 功能描述:紅外發(fā)射源 Infrared 940nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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