參數(shù)資料
型號(hào)： M12L64322A-7BG
廠(chǎng)商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi)： DRAM
英文描述： 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述： 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
封裝： 8 X 13 MM, LEAD FREE, BGA-90
文件頁(yè)數(shù)： 17/47頁(yè)
文件大小： 791K
代理商： M12L64322A-7BG
ES MT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
17/47
Write command
(CS ,CAS ,
WE
= Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
(CS , CAS = Low, RAS ,
WE
= High)
Read data is available afterCAS latency requirements have been met.
This command sets the burst start address given by the column address.
CBR (auto) refresh command
(CS , RAS , CAS = Low,
WE
, CKE = High)
This command is a request to begin the CBR refresh operation. The refresh
address is generated internally.
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a
row activate command.
During t
RC
period (from refresh command to refresh or activate command), the
M12L64322A cannot accept any other command.
CLK
CLK
CKE
CKE
CS
RAS
WE
BA0, BA1
(Bank select)
BA0, BA1
(Bank select)
A10
A10
Add
Add
CAS
H
H
Col.
Fig. 4 Column address and
write command
Fig. 5 Column address and
read command
CLK
CKE
BA0, BA1
(Bank select)
A10
Add
H
Fig. 6 Auto refresh command
Col.
CS
RAS
WE
CAS
CS
RAS
WE
CAS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-7BG2U 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M12L64322A-7T 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7TG2U 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M-12-LID-PLATED 功能描述:罩類(lèi)、盒類(lèi)及殼類(lèi)產(chǎn)品 PLTD LID FOR M12 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級(jí): 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
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