參數(shù)資料
型號(hào)： M12L64322A-7BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述： 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
封裝： 8 X 13 MM, LEAD FREE, BGA-90
文件頁(yè)數(shù)： 41/47頁(yè)
文件大?。?/td> 791K
代理商： M12L64322A-7BG
ES MT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
41/47
Write interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full page
*Note : 1. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
AC parameter of t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
data after Row precharge cycle will be masked internally.
2. Burst stop is valid at every burst length.
C L O C K
C K E
C S
R A S
C A S
A D D R
W E
DQ
DQ M
A10/AP
BA1
BA0
RAa
CAa
CAb
RAa
DAa0 DAa1
DAb1
DAb0
DAb2
Row Active
(A-Bank)
W rite
(A-Bank)
Burst Stop
W rite
(A-Bank)
:Don't Care
HIGH
DAa2 DAa3 DAa4
DAb3 DAb4 DAb5
Precharge
(A-Bank)
t
B D L
t
RD L
* Not e 1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-7BG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M12L64322A-7T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M-12-LID-PLATED 功能描述:罩類、盒類及殼類產(chǎn)品 PLTD LID FOR M12 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級(jí): 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
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