參數(shù)資料
型號(hào): M12L64322A-7TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
封裝: 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
文件頁(yè)數(shù): 46/47頁(yè)
文件大?。?/td> 791K
代理商: M12L64322A-7TG
ES MT
PACKING
90-BALL SDRAM ( 8x13 mm )
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
46/47
DIMENSIONS
Symbol
A
A
1
A
2
b
D
E
D
1
E
1
e
Controlling dimension : Millimeter.
Dimension in mm
Min
Norm
0.30
0.35
0.586
0.40
0.45
7.90
8.00
12.90
13.00
6.40
11.20
0.80
Dimension in inch
Min
Norm
0.012
0.014
0.023
0.016
0.018
0.311
0.315
0.508
0.512
0.252
0.441
0.031
Max
1.00
0.40
0.50
8.10
13.10
Max
0.039
0.016
0.020
0.319
0.516
相關(guān)PDF資料
PDF描述
M12S128168A 2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-10TG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12S16161A-7BG 512K x 16Bit x 2Banks Synchronous DRAM
M12S16161A-7TG 512K x 16Bit x 2Banks Synchronous DRAM
M12S64322A 512K x 32 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-7TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M-12-LID-PLATED 功能描述:罩類、盒類及殼類產(chǎn)品 PLTD LID FOR M12 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級(jí): 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red
M12M1 制造商:TE Connectivity 功能描述:
M12M124D-0.5 制造商:L COM 功能描述:CA M12 TO M12 4 POS D .5M
M12M124D-1 制造商:L COM 功能描述:CA M12 TO M12 4 POS D 1M