參數(shù)資料
型號(hào)： M12L64322A-7TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述： 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
封裝： 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
文件頁數(shù)： 6/47頁
文件大小： 791K
代理商： M12L64322A-7TG
ES MT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
6/47
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
C
° , f = 1MHZ)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A10, BA0 ~ BA1)
CIN1
2
4
pF
Input capacitance
(CLK, CKE, CS , RAS , CAS ,
WE
& DQM)
CIN2
2
4
pF
Data input/output capacitance (DQ0 ~ DQ31)
COUT
2
5
pF
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
，
T
A
= 0 to 70°
Version
Parameter
Symbol
Test Condition
CAS
Latency
-5
-6
-7
Unit
Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC(min)
I
OL
= 0 mA
180 160 140
mA
1,2
I
CC2P
CKE
≤
V
IL
(max), tcc = 15ns
2
Precharge Standby Current
in power-down mode
I
CC2PS
CKE & CLK
≤
V
IL
(max), t
cc
=
∞
2
mA
I
CC2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
cc
= 15ns
Input signals are changed one time during 30ns
30
Precharge Standby Current
in non power-down mode
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
cc
=
∞
input signals are stable
10
mA
I
CC3P
CKE
≤
V
IL
(max), tcc = 15ns
10
Active Standby Current
in power-down mode
I
CC3PS
CKE & CLK
≤
V
IL
(max), t
cc
=
∞
10
mA
I
CC3N
CKE
≥
VIH(min), CS
≥
V
IH
(min), tcc = 15ns
Input signals are changed one time during 30ns
40
mA
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), tcc =
∞
input signals are stable
10
mA
3
280 250 220
Operating Current
(Burst Mode)
I
CC4
IOL = 0 mA
Page Burst
2 Banks activated
2
220 200 180
mA
1,2
Refresh Current
Self Refresh Current
I
CC5
I
CC6
t
RC
≥
t
RC(min)
CKE
≤
0.2V
330 310 285
2
mA
mA
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-7TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
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