參數(shù)資料
型號: M13S64164A-6BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述: 4M X 16 DDR DRAM, 0.7 ns, PBGA60
封裝: 13 X 8 MM, LEAD FREE, BGA-60
文件頁數(shù): 13/49頁
文件大?。?/td> 1526K
代理商: M13S64164A-6BG
ES MT
Preliminary
M13S64164A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 0.3 13/49
Extended Mode Register Set (EMRS)
The extended mode register stores the data enabling or disabling DLL. The default value of the extended mode register is not
defined, therefore the extended mode register must be written after power up for enabling or disabling DLL. The extended mode
register is written by asserting low on CS , RAS , CAS ,
WE
and high on BA0 (The DDR SDRAM should be in all bank
precharge with CKE already high prior to writing into the extended mode register). The state of address pins A0~A11 and BA1 in
the same cycle as CS , RAS , CAS and
WE
going low is written in the extended mode register. The mode register contents
can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state.
A0 is used for DLL enable or disable. “High” on BA0 is used for EMRS. All the other address pins except A0 and BA0 must be set
to low for proper EMRS operation. Refer to the table for specific codes.
BA1 BA0
0
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
1
RFU : Must be set “0”
D.I.C DLL
Output Driver Strength Control
A0
DLL Enable
0
Normal
0
Enable
1
Weak
1
Disable
BA1 BA0
Operaing Mode
0
0
MRS Cycle
0
1
EMRS Cycle
*QFC is not used; don’t care.
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M13S64164A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
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