參數(shù)資料
型號(hào)： M13S64164A-6BG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述： 4M X 16 DDR DRAM, 0.7 ns, PBGA60
封裝： 13 X 8 MM, LEAD FREE, BGA-60
文件頁(yè)數(shù)： 24/49頁(yè)
文件大?。?/td> 1526K
代理商： M13S64164A-6BG
ES MT
Preliminary
M13S64164A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 0.3 24/49
The Burst Stop command is a mandatory feature for DDR SDRAMs. The following functionality is required.
1. The BST command may only be issued on the rising edge of the input clock, CLK.
2. BST is only a valid command during Read burst.
3. BST during a Write burst is undefined and shall not be used.
4. BST applies to all burst lengths.
5. BST is an undefined command during Read with autoprecharge and shall not be used.
6. When terminating a burst Read command, the BST command must be issued L
BST
( “BST Latency”) clock cycles before the
clock edge at which the output buffers are tristated, where L
BST
equals the CAS latency for read operations.
7. When the burst terminates, the DQ and DQS pins are tristated.
The BST command is not byte controllable and applies to all bits in the DQ data word and the (all) DQS pin(s).
DM masking
The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle. Not read cycle. When the
data mask is activated (DM high) during write operation, DDR SDRAM does not accept the corresponding data. (DM to data-mask
latency is zero) DM must be issued at the rising or falling edge of data strobe.
<Burst Length = 8>
0
1
2
3
C L K
C L K
4
5
6
7
8
CO MM AN D
t
D Q S S
DQS
DQ 's
D M
W RITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Din 0
NOP
Din 1
Din 2
Din 3
Din 4
Din 6
Din 7
Din 5
masked by DM = H
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M13S64164A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64322A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Double Data Rate Synchronous DRAM
M-14 功能描述:TERM BARRIER 14CIRC DUAL ROW RoHS:是 類別:連接器，互連式 >> 接線座 - 隔板塊 系列:M 標(biāo)準(zhǔn)包裝:10 系列:Beau™ 38780 端接塊類型:阻隔塊 電路數(shù):15 導(dǎo)線入口數(shù)目:30 間距:0.438"（11.12mm） 行數(shù):2 電流:15A 電壓:300V 線規(guī):14-22 AWG 頂部端子:螺釘 底部端子:焊片 阻擋層類型:雙壁（雙） 特點(diǎn):法蘭 顏色:黑 包裝:散裝 安裝類型:通孔 工作溫度:- 材料 - 絕緣體:聚對(duì)苯二甲酸丁二酯（PBT），玻璃纖維增強(qiáng)型 材料可燃性額定值:UL94 V-0 其它名稱:038780-111538780-1115387801115
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