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參數(shù)資料
| 型號： | M34W02 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 2Kbit Serial EEPROM with Software Data Protection(2Mb串行EEPROM) |
| 中文描述： | 2Kbit串行EEPROM與軟件數(shù)據(jù)保護（處理器串行EEPROM中） |
| 文件頁數(shù)： | 6/17頁 |
| 文件大?。?/td> | 152K |
| 代理商： | M34W02 |
Symbol
Alt
Parameter
Min
Max
Unit
t
CH1CH2
(1)
t
R
Clock Rise Time
300
ns
t
CL1CL2
(1)
t
F
Clock Fall Time
300
ns
t
DH1DH2
(1)
t
R
SDA Rise Time
20
300
ns
t
DL1DL2
(1)
t
F
SDA Fall Time
20
300
ns
t
CHDX
(2)
t
SU:STA
Clock High to Input Transition
600
ns
t
CHCL
t
HIGH
Clock Pulse Width High
600
ns
t
DLCL
t
HD:STA
Input Low to Clock Low (START)
600
ns
t
CLDX
t
HD:DAT
Clock Low to Input Transition
0
μ
s
t
CLCH
t
LOW
Clock Pulse Width Low
1.3
μ
s
t
DXCX
t
SU:DAT
Input Transition to Clock Transition
100
ns
t
CHDH
t
SU:STO
Clock High to Input High (STOP)
600
ns
t
DHDL
t
BUF
Input High to Input Low (Bus Free)
1.3
μ
s
t
CLQV
t
AA
Clock Low to Next Data Out Valid
200
900
ns
t
CLQX
t
DH
Data Out Hold Time
200
ns
f
C
f
SCL
Clock Frequency
400
kHz
t
W
t
WR
Write Time
10
ms
Notes:
1. Sampled only, not 100% tested.
2. For a reSTART condition, or following a write cycle.
Table 7. AC Characteristics
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 4.5V to 5.5V, 2.5V to 5.5V or 1.8V to 5.5V)
Input Rise and Fall Times
≤
50ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
Input and Output Timing Ref.
Voltages
0.3V
CC
to 0.7V
CC
Table 8. AC Measurement Conditions
AI00825
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Figure 4. AC Testing Input Output Waveforms
Byte Write.
In the Byte Write mode, after the device
select code and the address, the master sends one
data byte. If the addressed location is in a write
protected area, the memory sends a NoACK and
the location is not modified. If the addressed loca-
tion is not write protected, the memory sends an
ACK. The master terminates the transfer by gener-
ating a STOP condition.
Depending on the 4 MSBs of the device select
code, the Byte Write instruction can be used to
modify a memory location (device select code
1010b) or can be used to access to the Protect
Register contents (device select code 0110b).
Page Write.
The Page Write mode allows up to 16
bytes to be written in a single write cycle, provided
that they are all located in the same ’row’ in the
memory: that is the 4 most significant memory
address bits (A7-A4) are the same. The master
sends from one up to 16 bytes of data, which are
6/17
M34W02
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