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參數(shù)資料
| 型號： | M48Z129V-70PM1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM |
| 中文描述： | 3.3V/5V的1兆位的SRAM 128KB的x8 ZEROPOWER |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 94K |
| 代理商： | M48Z129V-70PM1 |
M48Z129Y, M48Z129V
10/13
Figure 9. Chip Enable Controlled, Write AC Waveforms
AI03611
tAVAV
tEHAX
tDVWH
DATA INPUT
A0-A16
E
W
DQ0-DQ7
VALID
tAVWH
tAVEL
tWLWH
tAVWL
tWHDX
tELEH
Figure 10. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
POWER SUPPLY DECOUPLING AND
UNDERSHOOT PROTECTION
Icc transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1 microfarad is recom-
mended in order to provide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below Vss by as much as one volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to Vss (cathode
connected to V
CC
, anode to Vss). (Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M48Z129V-70PMTR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM |
| M48Z129V-85PM | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM |
| M48Z129V-85PM1 | 功能描述:NVRAM 1M (128Kx8) 85ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48Z129V-85PM1 | 制造商:STMicroelectronics 功能描述:NVRAM 10 YR BATTERY 1MB 48Z129 |
| M48Z129V-85PMTR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM |
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