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參數(shù)資料
| 型號： | M52S128168A-7.5BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, FBGA-54 |
| 文件頁數(shù)： | 16/47頁 |
| 文件大小： | 1213K |
| 代理商： | M52S128168A-7.5BG |
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ES MT
Precharge command
(CS ,RAS ,
WE
= Low,CAS = High )
This command begins precharge operation of the bank selected by BA1 and BA0
(BS). When A10 is High, all banks are precharged, regardless of BA1 and BA0.
When A10 is Low, only the bank selected by BA1 and BA0 is precharged.
After this command, the DRAM can’t accept the activate command to the
precharging bank during t
RP
(precharge to activate command period).
This command corresponds to a conventional DRAM’s RAS rising.
Write command
(CS ,CAS ,
WE
= Low,RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
(CS ,CAS = Low,RAS ,
WE
= High)
Read data is available after CAS latency requirements have been met.
This command sets the burst start address given by the column address.
Preliminary
M52S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
16/47
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S128168A-7.5TG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S16161A | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-10BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-10TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-8BG | 512K x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S128168A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128324A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M52S128324A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M52S128324A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
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