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參數(shù)資料
| 型號(hào)： | M52S128168A-7.5BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, FBGA-54 |
| 文件頁(yè)數(shù)： | 7/47頁(yè) |
| 文件大?。?/td> | 1213K |
| 代理商： | M52S128168A-7.5BG |
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ES MT
Preliminary
M52S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
May. 2007
7/47
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
-7.5
-10
Parameter
Symbol
Min
7.5
12
-
-
2.5
2.5
2.5
2
1
1
Max
Min
10
12
2.5
3
3
2.5
1
1
Max
Unit
Note
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CLK cycle time
t
CC
1000
1000
ns
1
6
9
6
7
10
7
CLK to valid
output delay
t
SAC
ns
1
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in
Hi-Z
t
OH
t
CH
t
CL
t
SS
t
SH
t
SLZ
ns
ns
ns
ns
ns
ns
2
3
3
3
3
2
CAS Latency =3
CAS Latency =2
t
SHZ
9
10
ns
*All AC parameters are measured from half to half.
Note:
1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S128168A-7.5TG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S16161A | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-10BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-10TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-8BG | 512K x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S128168A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128324A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M52S128324A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M52S128324A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
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