參數(shù)資料
型號(hào)： M58LR128FB95ZB6E
廠商： NUMONYX
元件分類： PROM
英文描述： 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件頁數(shù)： 28/82頁
文件大?。?/td> 1303K
代理商： M58LR128FB95ZB6E
M58LR128FT, M58LR128FB
34/82
Table 14. Lock Status
Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read
in the Read Electronic Signature command with A1 = VIH and A0 = VIL.
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to VIH on a locked block will restore the previous DQ0 value, giving a 111 or 110.
Current
Protection Status(1)
(WP, DQ1, DQ0)
Next Protection Status(1)
(WP, DQ1, DQ0)
Current State
Program/Erase
Allowed
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
After
WP transition
1,0,0
yes
1,0,1
1,0,0
1,1,1
0,0,0
1,0,1(2)
no
1,0,1
1,0,0
1,1,1
0,0,1
1,1,0
yes
1,1,1
1,1,0
1,1,1
0,1,1
1,1,1
no
1,1,1
1,1,0
1,1,1
0,1,1
0,0,0
yes
0,0,1
0,0,0
0,1,1
1,0,0
0,0,1(2)
no
0,0,1
0,0,0
0,1,1
1,0,1
0,1,1
no
0,1,1
1,1,1 or 1,1,0 (3)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LR128FB95ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FB95ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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