參數(shù)資料
型號： M58LR128FB95ZB6E
廠商： NUMONYX
元件分類： PROM
英文描述： 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件頁數(shù)： 58/82頁
文件大?。?/td> 1303K
代理商： M58LR128FB95ZB6E
61/82
M58LR128FT, M58LR128FB
Table 33. CFI Query System Interface Information
Offset
Data
Description
Value
01Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
01Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2V
01Dh
0085h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
8.5V
01Eh
0095h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
9.5V
01Fh
0004h
Typical time-out per single byte/word program = 2n s
16s
020h
0009h
Typical time-out for Buffer Program = 2n s
512s
021h
000Bh
Typical time-out per individual block erase = 2n ms
2s
022h
0000h
Typical time-out for full chip erase = 2n ms
NA
023h
0003h
Maximum time-out for word program = 2n times typical
128s
024h
0001h
Maximum time-out for Buffer Program = 2n times typical
1024s
025h
0001h
Maximum time-out per individual block erase = 2n times typical
4s
026h
0000h
Maximum time-out for chip erase = 2n times typical
NA
相關(guān)PDF資料
PDF描述
M58LW128A150N1 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
M58WR064HU70ZB6U 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
M59DR032F100N1T 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
M5F7924 24 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7920 20 V FIXED NEGATIVE REGULATOR, PSFM3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LR128FB95ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FB95ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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