- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄180232 > M58LR128FB95ZB6E (NUMONYX) 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 PDF資料下載
參數(shù)資料
| 型號(hào)： | M58LR128FB95ZB6E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 |
| 封裝： | 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件頁數(shù)： | 43/82頁 |
| 文件大?。?/td> | 1303K |
| 代理商： | M58LR128FB95ZB6E |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁當(dāng)前第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁
M58LR128FT, M58LR128FB
48/82
Table 23. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. tWHEL has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank tWHEL is 0ns.
3. Meaningful only if L is always kept low.
Symbol
Alt
Parameter
M58LR128FT/B
Unit
85
95
Write
E
n
a
b
le
C
o
n
tro
lled
T
im
ing
s
tAVAV
tWC
Address Valid to Next Address Valid
Min
85
95
ns
tAVLH
Address Valid to Latch Enable High
Min
7
10
ns
tAVWH
(3)
tWC
Address Valid to Write Enable High
Min
50
ns
tDVWH
tDS
Data Valid to Write Enable High
Min
50
ns
tELLH
Chip Enable Low to Latch Enable High
Min
10
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
Min
0
ns
tELQV
Chip Enable Low to Output Valid
Min
85
95
ns
tELKV
Chip Enable Low to Clock Valid
Min
9
ns
tGHWL
Output Enable High to Write Enable Low
Min
17
20
ns
tLHAX
Latch Enable High to Address Transition
Min
9
10
ns
tLLLH
Latch Enable Pulse Width
Min
9
10
ns
tWHAV
(3)
Write Enable High to Address Valid
Min
0
ns
tWHAX
(3)
tAH
Write Enable High to Address Transition
Min
0
ns
tWHDX
tDH
Write Enable High to Input Transition
Min
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
Min
0
ns
tWHEL
(2)
Write Enable High to Chip Enable Low
Min
25
ns
tWHGL
Write Enable High to Output Enable Low
Min
0
ns
tWHLL
Write Enable High to Latch Enable Low
Min
0
ns
tWHWL
tWPH Write Enable High to Write Enable Low
Min
25
ns
tWHQV
Write Enable High to Output Valid
Min
110
120
ns
tWLWH
tWP
Write Enable Low to Write Enable High
Min
50
ns
Pr
ote
c
ti
on
T
imi
ng
s
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
ns
tQVWPL
Output (Status Register) Valid to Write Protect Low
Min
0
ns
tVPHWH
tVPS VPP High to Write Enable High
Min
200
ns
tWHVPL
Write Enable High to VPP Low
Min
200
ns
tWHWPL
Write Enable High to Write Protect Low
Min
200
ns
tWPHWH
Write Protect High to Write Enable High
Min
200
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW128A150N1 | 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 |
| M58WR064HU70ZB6U | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| M59DR032F100N1T | 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48 |
| M5F7924 | 24 V FIXED NEGATIVE REGULATOR, PSFM3 |
| M5F7920 | 20 V FIXED NEGATIVE REGULATOR, PSFM3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LR128FB95ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FB95ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。