參數(shù)資料
型號: M58LR128FB95ZB6E
廠商: NUMONYX
元件分類: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56
封裝: 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件頁數(shù): 69/82頁
文件大?。?/td> 1303K
代理商: M58LR128FB95ZB6E
71/82
M58LR128FT, M58LR128FB
Figure 25. Block Erase Flowchart and Pseudo Code
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
2. Any address within the bank can equally be used.
Write 20h (2)
AI10524
Start
Write Block
Address & D0h
Read Status
Register (2)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
YES
SR4, SR5 = 1
VPP Invalid
Error (1)
Command
Sequence Error (1)
NO
SR5 = 0
Erase Error (1)
End
YES
NO
SR1 = 0
Erase to Protected
Block Error (1)
YES
erase_command ( blockToErase ) {
writeToFlash (blockToErase, 0x20) ;
/*see note (2) */
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A22 are significant */
/* Memory enters read status state after
the Erase Command */
} while (status_register.SR7== 0) ;
do {
status_register=readFlash (blockToErase) ;
/* see note (2) */
/* E or G must be toggled*/
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if ( (status_register.SR4==1) && (status_register.SR5==1) )
/* command sequence error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
if ( (status_register.SR5==1) )
/* erase error */
error_handler ( ) ;
}
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