參數(shù)資料
型號(hào): M58WR064HU70ZB6U
元件分類: PROM
英文描述: 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝: 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁數(shù): 1/117頁
文件大小: 2300K
代理商: M58WR064HU70ZB6U
November 2008
Rev 6
1
M58WR064HU
M58WR064HL
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
Supply voltage
–VDD = 1.7 V to 2 V for Program, Erase and
Read
–VDDQ = 1.7 V to 2 V for I/O Buffers
–VPP = 12 V for fast Program (9 V tolerant)
Multiplexed address/data
Synchronous / asynchronous read
– Synchronous Burst Read mode: 66 MHz
– Random Access: 70 ns
Synchronous burst read suspend
Programming time
–8 μs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
Memory blocks
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
Common Flash Interface (CFI)
100,000 program/erase cycles per block
Electronic signature
– Manufacturer Code: 20h
– Top Device Code,
M58WR064HU: 88C0h
– Bottom Device Code,
M58WR064HL: 88C1h
Package
RoHS compliant
Automotive device grade 6 in LBGA80
package:
– Temperature: -40 to 85 °C
– Automotive grade certified
LBGA
VFBGA44
7.7 x 9mm (ZB)
7.5 × 5mm (ZA)
FBGA
LBGA80 (ZA)
10 x 8 ball array
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