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參數(shù)資料
| 型號(hào)： | M58LR128FB95ZB6E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 |
| 封裝： | 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件頁數(shù)： | 60/82頁 |
| 文件大?。?/td> | 1303K |
| 代理商： | M58LR128FB95ZB6E |
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M58LR128FT, M58LR128FB
Table 35. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(P)h = 10Ah
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
0052h
"R"
0049h
"I"
(P+3)h = 10Dh
0031h
Major version number, ASCII
"1"
(P+4)h = 10Eh
0033h
Minor version number, ASCII
"3"
(P+5)h = 10Fh
00E6h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
Chip Erase supported
(1 = Yes, 0 = No)
bit 1
Erase Suspend supported
(1 = Yes, 0 = No)
bit 2
Program Suspend supported
(1 = Yes, 0 = No)
bit 3
Legacy Lock/Unlock supported
(1 = Yes, 0 = No)
bit 4
Queued Erase supported
(1 = Yes, 0 = No)
bit 5
Instant individual block locking supported (1 = Yes, 0 = No)
bit 6
Protection bits supported
(1 = Yes, 0 = No)
bit 7
Page mode read supported
(1 = Yes, 0 = No)
bit 8
Synchronous read supported
(1 = Yes, 0 = No)
bit 9
Simultaneous operation supported
(1 = Yes, 0 = No)
bit 10 to 31Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31
bit field of optional features follows at the end of the bit-30
field.
No
Yes
No
Yes
0003h
(P+7)h = 111h
0000h
(P+8)h = 112h
0000h
(P+9)h = 113h
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 114h
0003h
Block Protect Status
Defines which bits in the Block Status Register section of the Query are
implemented.
bit 0
Block protect Status Register Lock/Unlock
bit active
(1 = Yes, 0 = No)
bit 1
Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
Yes
(P+B)h = 115h
0000h
(P+C)h = 116h
0018h
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1.8V
(P+D)h = 117h
0090h
VPP Supply Optimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
9V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LR128FB95ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FB95ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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