參數資料
型號: M58LR128FB95ZB6E
廠商: NUMONYX
元件分類: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56
封裝: 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件頁數: 38/82頁
文件大?。?/td> 1303K
代理商: M58LR128FB95ZB6E
43/82
M58LR128FT, M58LR128FB
Figure 12. Synchronous Burst Read AC Waveforms
AI10197
DQ0-DQ15
E
G
A0-A22
L
WAIT
K
(4)
VALID
ADDRESS
tLLLH
tAVLH
tGLQX
tAVKH
tLLKH
tELKH
tKHAX
NOT
VALID
Note
1
Note
2
Note
2
tKHTX
tEHQX
tEHQZ
tGHQX
tGHQZ
Hi-Z
VALID
Note
2
tELTV
tKHTV
tEHTZ
Address
Latch
X
Latency
Valid
Data
Flow
Boundary
Crossing
Valid
Data
Standby
Note
1.
The
n
umber
of
cloc
k
cycles
to
be
inser
ted
depends
on
the
X
latency
set
in
the
Burst
Configur
ation
Register
.
2.
The
W
AIT
signal
can
be
configured
to
be
activ
e
dur
ing
w
ait
state
or
one
cycle
bef
ore
.W
AIT
signal
is
activ
e
Lo
w
.
3.
Address
latched
and
data
output
on
the
r
ising
cloc
k
edge
.
4.
Either
the
r
ising
or
the
f
alling
edge
of
the
cloc
k
signal,
K,
can
be
configured
as
the
activ
e
edge
.Here
,the
activ
e
edge
of
K
is
the
r
ising
one
.
tEHEL
tKHQV
tKHQX
Hi-Z
tGLTV
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M58LR128FB95ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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M58LR128FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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