- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359085 > M5M29KE131BTP (Renesas Technology Corp.) 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | M5M29KE131BTP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY |
| 中文描述： | 134217728位（16,777,216 - Word的8位/ 8388608字由16位）的CMOS閃存 |
| 文件頁數(shù)： | 15/33頁 |
| 文件大?。?/td> | 336K |
| 代理商： | M5M29KE131BTP |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
M5M29KE131BTP
Renesas LSIs
Rev.1.1_48a_bezz
15
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT)
CMOS FLASH MEMORY
Stacked-uMCP (micro Multi Chip Package)
AC electrical characteristics
-Timing measurements are made under AC waveforms for read operations.
Read Only Mode
Min.
70
Typ.
Max.
tRC
ta(AD)
ta(CE)
ta(OE)
ta(PAD)
tCEPH
tCLZ
tDF(CE)
tOLZ
tDF(OE)
tPHZ
ta(BYTE)
tBHZ
tOH
tBCD
tBAD
tOEH
tPS
tAVAV
tAVQV
tELQV
tGLQV
tPAVQV
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Page Read Access Time
CE# "H"Pulse width
Chip Enable to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enable to Output in Low-Z
Output Enable to High to Output in High-Z
RP# Low to Output High-Z
BYTE# access time
BYTE# low to output high-Z
Output Hold from CE#, OE# and Addresses
CE# low to BYTE# high or low
Address to BYTE# high or low
OE# Hold from WE# High
RP# Recovery to CE# Low
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
30
25
30
0
tELQX
tEHQZ
tGLQX
tGHQZ
tPLQZ
tFL/HQV
tFLQZ
tOH
tELFL/H
tAVFL/H
tWHGL
tPHEL
25
0
25
150
70
25
0
5
5
10
150
Symbol
Parameter
Limits
Units
Flash VCC=3.0-3.6V
(Ta=-40 ~85
°
C and Flash VCC=3.0V~3.6V, unless otherwise noted)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M5256DFP | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DFP-55XL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DFP-70LL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DVP-55LL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5256DFP-70XL | 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29KE131BVP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package) |
| M5M29VB320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29VT320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。