參數(shù)資料
型號: M5M29KE131BTP
廠商: Renesas Technology Corp.
英文描述: 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
中文描述: 134217728位(16,777,216 - Word的8位/ 8388608字由16位)的CMOS閃存
文件頁數(shù): 17/33頁
文件大小: 336K
代理商: M5M29KE131BTP
M5M29KE131BTP
Renesas LSIs
Rev.1.1_48a_bezz
17
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT)
CMOS FLASH MEMORY
Stacked-uMCP (micro Multi Chip Package)
Parameter
Block Erase Time
Main Block Write Time (Byte Mode)
Main Block Write Time (Word Mode)
Page Write Time
Flash to Page Buffer Time
Min.
Typ.
150
2
1
4
100
Max.
600
8
4
80
150
Units
ms
sec
sec
ms
μs
Parameter
Program Susupend Time
Erase Susupend Time
Min.
Typ.
Max.
15
15
Unit
μs
μs
Flash VCC Power Up / Down Timing
Program Suspend / Erase Suspend Time
Program / Erase Time
During power up / down, by the noise pulses on control pins, the device has possibility of accidental erase of programming.
The device must be protected against initiation of write cycle for memory contents during power up / down. The delay time
of min. 60 μsec is always required before read operation or write operation is initiated from the time Flash VCC reaches
Flash VCC min. during power up /down. By holding RP#=VIL, the contents of memory is protected during Flash VCC
power up / down. During power up, RP# must be held VIL for min. 2μs from the time Flash VCC reaches Flash VCC min..
During power down, RP# must be held VIL until Flash VCC reaches GND. RP# doesn’t have latch mode, therefore RP#
must be held VIH during read operation or erase / program operation.
symbol
tVCS
tVHEL
Parameter
RP#=VIH Setup Time from Flash VCC min.
CE#=VIL Setup Time from Flash VCC min.
Min.
2
60
Typ.
Max.
Unit
μs
μs
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參數(shù)描述
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