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參數(shù)資料
| 型號(hào)： | M5M29KE131BTP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY |
| 中文描述： | 134217728位（16,777,216 - Word的8位/ 8388608字由16位）的CMOS閃存 |
| 文件頁(yè)數(shù)： | 14/33頁(yè) |
| 文件大?。?/td> | 336K |
| 代理商： | M5M29KE131BTP |
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M5M29KE131BTP
Renesas LSIs
Rev.1.1_48a_bezz
14
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT)
CMOS FLASH MEMORY
Stacked-uMCP (micro Multi Chip Package)
Min.
-2
-20
Typ.
1)
Max.
2
20
ILI
ILO
Input Leakage Current
Output Leakage Current
ISB3
10
50
5MHz
20
30
1MHz
4
8
VIL
VIH
VOL
VOH1
VOH2
VLKO Low VCC Lock Out Voltage
2)
Input Low Voltage
Input High Voltage
Output Low Voltage
-0.5
2.4
0.4
VCC+0.5
0.45
0.85xVCC
VCC-0.4
1.5
2.2
5
10
ICC1P VCC Page Read Current for Word
Vcc = 3.6V, VIN = VIL/VIH, RP# = OE# =
VIH, CE# = VIL, Iout = 0mA
5MHz
Symbol
Parameter
Test Conditions
Limits
ISB2
VCC= 3.6V, VIN= GND/VCC, CE#= RP#=
WP#= VCC±0.3V
VCC= 3.6V, VIN= VIL/VIH, RP#= VIL
0.2
VCC Stand by Current
12
0V< VIN< VCC
0V< VOUT< VCC
12
ISB4
VCC= 3.6V, VIN= GND or VCC, RP#= GND±
0.3V
Vcc = 3.6V, VIN = VIL/VIH, RP# = OE# =
VIH, CE# =VIL, Iout = 0mA
0.2
VCC Deep Power Down Current
15
ICC1
VCC Read Current for Word
ICC2
VCC Write Current for Word
Vcc = 3.6V, VIN = VIL/VIH, RP# = OE# = VIH, CE# =
WE# = VIL
ICC3
VCC Program Current
VCC = 3.6V, VIN = VIL/VIH, CE#= RP# = WP# =
VIH
VCC = 3.6V, VIN = VIL/VIH, CE#= RP# = WP# =
VIH
VCC = 3.6V, VIN = VIL/VIH, CE#= RP# = WP# =
VIH
35
ICC4
VCC Erase Current
35
ICC5
VCC Suspend Current
400
IOL = 4.0mA
IOH = -2.0mA
IOH = -100uA
Output High Voltage
Device ID Code
Absolute Maximum Ratings
Symbol
VCC
VI1
All Input or Output Voltage
1)
Ta
Ambient Temperature
Tbs
Temperature under Bias
Tstg
Storage Temperature
Iout
Output Short Circuit Current
DC electrical characteristics
(Ta= -40 ~85
°
C and Flash VCC=3.0V~3.6V, unless otherwise noted)
The output of upper byte data (DQ15-DQ8) is “0H”. A22 must be set “VIL”.
1)Minimum DC voltage is –0.6V on input / output pins. During transitions, the level may undershoot to –2.0V for periods
<20ns. Maximum DC voltage on input / output pins is VCC+0.5V which, during transitions, may overshoot to VCC+1.5V
for periods <20ns.
All currents are in RMS unless otherwise noted.
1) Typical values at Flash VCC=3.3V, Ta=25
°
C.
2) To protect against initiation of write cycle during Flash VCC power up / down, a write cycle is locked out for Flash VCC less than VLKO.
If Flash VCC is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Flash
VCC is less than VLKO, the alteration of memory contents may occur.
Parameter
VCC Voltage
Conditions
Min.
-0.2
-0.6
-40
-50
-65
Max.
4.6
4.6
85
95
125
100
Units
V
V
°
C
°
C
°
C
mA
With Respect to GND
A22
A0
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
Hex. Data
Manufacturer Code
Device Code
VIL
VIL
VIL
VIH
"0"
"1"
"0"
"0"
"0"
"1"
"1"
"1"
"1"
"1"
"1"
"0"
"0"
"0"
"0"
"1"
1CH
B9H
Code
Pins
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| M5M29KE131BVP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package) |
| M5M29VB320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29VT320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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