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參數(shù)資料
| 型號(hào)： | M5M29KE131BTP |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY |
| 中文描述： | 134217728位（16,777,216 - Word的8位/ 8388608字由16位）的CMOS閃存 |
| 文件頁數(shù)： | 18/33頁 |
| 文件大?。?/td> | 336K |
| 代理商： | M5M29KE131BTP |
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M5M29KE131BTP
Renesas LSIs
Rev.1.1_48a_bezz
18
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT)
CMOS FLASH MEMORY
Stacked-uMCP (micro Multi Chip Package)
Flash VCC Power up / down Timing
AC Waveforms for Read Operation and Test Conditions
Input Voltage : V
IL
=0V, V
IH
=Flash Vcc
Input Rise and Fall Times : <5ns
Reference Voltage
at timing measurement : (Flash Vcc)/2
Output Load : 1 TTL gate +
CL(30pF)
or
Output Valid
A
22
-A
0
(WORD)
A
22
-A
-1
(BYTE)
CE#
OE#
WE#
DATA
Address Valid
High-Z
DUT
3.3kohm
1N914
1.3V
CL=30pF
RP#
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
O
V
IH
V
IL
t
a(AD)
t
a(CE)
t
DF(CE)
t
DF(OE)
t
OEH
t
a(OE)
t
OLZ
t
OH
High-Z
t
CLZ
t
PHZ
t
PS
t
RC
t
CEPH
FFH
CL=30pF
- After inputting Read Array Command FFH, it is necessary to make CE# “H” pulse more than 30ns (tCEPH).
And after inputting Read Array Command FFH, it is also necessary to keep 30ns to recover before starting read
after WE# rises “H” in case of changing a part or all of addresses( A22~A0/A22~A-1) and CE#=“L”.
t
PS
3.0V
GND
V
CC
V
IH
V
IL
RP#
Read /Write Inhibit
t
VCS
CE#
WE#
Read /Write Inhibit
V
IH
V
IL
V
IH
V
IL
t
PS
Read /Write Inhibit
t
VHEL
Test Conditions for
AC Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29KE131BVP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package) |
| M5M29VB320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29VT320VP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29WB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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