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參數(shù)資料
| 型號(hào)： | M66252FP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1152 x 8-BIT LINE MEMORY FIFO |
| 中文描述： | 1152 × 8位線記憶先進(jìn)先出 |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | M66252FP |
2
MITSUBISHI
DIGITAL ASSP
M66252P/FP
1152 x 8-BIT LINE MEMORY (FIFO)
When read enable input RE is “L,” data on memory are out-
put to Q
0
thru Q
7
synchronously with read clock input RCK
rise edges. At this time, read address counter executes
counting.
The following read-related operations are also performed
synchronously with RCK rise edges.
When RE is “H,” reading from memory is inhibited, and read
address counter stops counting. The status of Q
0
thru Q
7
be-
comes high-impedance.
When read reset input RRES is “L,” read address counter is
initialized.
FUNCTION
When the status of write enable input WE is “L,” data on D
0
thru D
7
are written on the memory synchronously with write
clock input WCK rise edges. At this time, write address
counter executes counting.
The following write-related operations are also performed
synchronously with WCK rise edges.
When WE is “H,” writing on memory is inhibited, and write ad-
dress counter stops counting.
When write reset input WRES is “L,” write address counter is
initialized.
Conditions
Reference pin: GND
Ta = 25
°
C
Ratings
–0.5 ~ +7.0
–0.5 ~ V
CC
+ 0.5
–0.5 ~ V
CC
+ 0.5
550 (Note 1)
–65 ~ 150
Symbol
V
CC
V
I
V
O
P
d
T
stg
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Storage temperature
Unit
V
V
V
mW
°
C
ABSOLUTE MAXIMUM RATINGS
(T
a
= –20 ~ 70
°
C unless otherwise noted)
Note 1: Ta
≥
62
°
C are derated at –8.8mW/
°
C (24P
4
Y)
Ta
≥
51
°
C are derated at –7.5mW/
°
C (24P
2
W)
RECOMMENDED OPERATIONAL CONDITIONS
Symbol
V
CC
GND
T
opr
Parameter
Supply voltage
Supply voltage
Ambient temperature
Limits
Typ.
5
0
Min.
4.5
–20
Max.
5.5
70
Unit
V
V
°
C
Symbol
V
IH
V
IL
V
OH
V
OL
I
IH
I
IL
I
OZH
I
OZL
I
CC
C
I
C
O
Parameter
“H” input voltage
“L” input voltage
“H” output voltage
“L” output voltage
“H” input current
“L” input current
“H” output current under “off” condition
“L” output current under “off” condition
Average supply current during operation
Input capacitance
Output capacitance under “off” condition
ELECTRICAL CHARACTERISTICS
(T
a
= –20 ~ 70
°
C, V
CC
= 5V
±
10%, GND = 0V)
Max.
0.8
0.55
1.0
–1.0
5.0
–5.0
100
10
15
Unit
V
V
V
V
μ
A
μ
A
μ
A
μ
A
mA
pF
pF
Typ.
Min.
2.0
V
CC
– 0.8
Limits
Test conditions
I
OH
= –4mA
I
OL
= 4mA
V
I
= V
CC
V
I
= GND
V
O
= V
CC
V
O
= GND
V
I
= V
IH
, V
IL
, Outputs are open
t
WCK
, t
RCK
= 100ns
f
= 1MHz
f
= 1MHz
WE, WRES, WCK, RE,
RRES, RCK
D
0
~D
7
WE, WRES, WCK, RE,
RRES, RCK
D
0
~D
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M66252P | 1152 x 8-BIT LINE MEMORY FIFO |
| M66256 | 5120 x 8-BIT LINE MEMORY (FIFO) |
| M66256FP | 5120 x 8-BIT LINE MEMORY (FIFO) |
| M66257 | 5120 x 8-BIT x 2 LINE MEMORY (FIFO) |
| M66257FP | 5120 x 8-BIT x 2 LINE MEMORY (FIFO) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M66252P | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:1152 x 8-BIT LINE MEMORY FIFO |
| M66255FP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8192 x 10-BIT LINE MEMORY (FIFO) |
| M66255FP(#TB0T) | 制造商:Renesas Electronics Corporation 功能描述: |
| M66256 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5120 x 8-BIT LINE MEMORY (FIFO) |
| M66256FP | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:5120 × 8-Bit Line Memory (FIFO) |
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