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參數(shù)資料
| 型號： | MBM29DL64DF70PBT |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| 中文描述： | 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | PLASTIC, FBGA-48 |
| 文件頁數(shù)： | 28/68頁 |
| 文件大?。?/td> | 854K |
| 代理商： | MBM29DL64DF70PBT |
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MBM29DL64DF
-70
28
I
COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register. Some
commands require Bank Address (BA) input. When command sequences are input into a bank reading, the
commands have priority over the reading.
I
DEVICE BUS OPERATION table shows the valid register command
sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are valid only while the
Sector Erase operation is in progress. Also the Program Suspend (B0h) and Program Resume (30h) commands
are valid only while the Program operation is in progress. Furthermore Read/Reset commands are functionally
equivalent, resetting the device to the read mode. Note that commands are always written at DQ
7
to DQ
0
and
DQ
15
to DQ
8
bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
5
=
1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register. Micro-
processor read cycles retrieve array data from the memory. The device remains enabled for reads until the
command register contents are altered.
The device automatically powers-up in the Read/Reset state. In this case a command sequence is not required
in order to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to “
I
AC CHARAC-
TERISTICS” and “
I
TIMING DIAGRAM” for the specific timing parameters.
Autoselect Command
Flash memories are designed for use in applications where the local CPU alters memory contents. Therefore
manufacture and device codes must be accessible while the device resides in the target system. PROM pro-
grammers typically access the signature codes by raising A
9
to a higher voltage. However multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains Autoselect command operation to supplement traditional PROM programming methodology.
The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated first by writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and actual data from the memory cell can be read from another bank. The
higher order address (A
21
, A
20
, A
19
) required for reading out the manufacture and device codes demands the
bank address (BA) set at the third write cycle.
Following the command write, in WORD mode, a read cycle from address (BA) 00h returns the manufacturer’s
code (Fujitsu
=
04h) . And a read cycle at address (BA) 01h outputs device code. When 227Eh was output, this
indicates that two additional codes, called Extended Device Codes will be required. Therefore the system may
continue reading out these Extended Device Codes at the address of (BA) 0Eh, as well as at (BA) 0Fh. Notice
that the above applies to WORD mode. The addresses and codes differ from those of BYTE mode (refer to
“MBM29DL64DF Sector Group Protection Verify Autoselect Codes” and “Extended Autoselect Code Table” in
I
DEVICE BUS OPERATION. )
The sector state (protection or unprotection) will be informed by address (BA) 02h for
×
16 ( (BA) 04h for
×
8) .
Scanning the sector group addresses (A
21
, A
20
, A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
) while (A
6
, A
3
, A
2
, A
1
,
A
0
)
=
(0, 0, 0, 1, 0) produces a logic “1” at device output DQ
0
for a protected sector group. The programming
verification should be performed by verifying sector group protection on the protected sector (see User Bus
Operations Tables.
The manufacture and device codes can be read from the selected bank. To read the manufacture and device
codes and sector group protection status from a non-selected bank, it is necessary to write the Read/Reset
command sequence into the register. Autoselect command should then be written into the bank to be read.
If the software (program code) for Autoselect command is stored in the Flash memory, the device and manu-
facture codes should be read from the other bank, which does not contain the software.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL64DF70TN | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800TA | 8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29DL800BA-90 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Yellow; Luminous Intensity:2500ucd; Viewing Angle:15 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-40 C to +85 C; Color:Yellow; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29DL800TA-12 | 122 x 32 pixel format, LED or EL Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL64DF70TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800BA | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT |
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