參數(shù)資料
型號： MBM29DL64DF70PBT
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
中文描述： 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝： PLASTIC, FBGA-48
文件頁數(shù)： 40/68頁
文件大?。?/td> 854K
代理商： MBM29DL64DF70PBT
MBM29DL64DF
-70
40
I
DC CHARACTERISTICS
*1 : I
CC
current listed includes both the DC operating current and the frequency dependent component.
*2 : I
CC
active while Embedded Algorithm (program or erase) is in progress.
*3 : This timing is only for Sector Group Protection Operation and Autoselect mode.
*4 : Applicable for only V
CC
.
*5 : Automatic sleep mode enables the low power mode when addresses remain stable for 150 ns.
*6 : Embedded Algorithm (program or erase) is in progress (@5 MHz.)
Parameter
Sym-
bol
Conditions
Value
Typ
Unit
Min
1.0
1.0
Max
+
1.0
+
1.0
Input Leakage Current
Output Leakage Current
A
9
, OE, RESET Inputs Leakage
Current
WP/ACC Accelerated Program
Current
I
LI
I
LO
V
IN
=
V
SS
to V
CC
, V
CC
=
V
CC
Max
V
OUT
=
V
SS
to V
CC
, V
CC
=
V
CC
Max
V
CC
=
V
CC
Max,
A
9
, OE, RESET
=
12.5 V
V
CC
=
V
CC
Max,
WP/ACC
=
V
ACC
Max
CE
=
V
IL
, OE
=
V
IH
,
f
=
5 MHz
CE
=
V
IL
, OE
=
V
IH
,
f
=
1 MHz
CE
=
V
IL
, OE
=
V
IH
V
CC
=
V
CC
Max, CE
=
V
CC
±
0.3 V,
RESET
=
V
CC
±
0.3 V,
WP/ACC
=
V
CC
±
0.3 V
V
CC
=
V
CC
Max,
RESET
=
V
SS
±
0.3 V
V
CC
=
V
CC
Max, CE
=
V
SS
±
0.3 V,
RESET
=
V
CC
±
0.3 V
V
IN
=
V
CC
±
0.3 V or V
SS
±
0.3 V
μ
A
μ
A
I
LIT
+
35
μ
A
I
LIA
20
mA
V
CC
Active Current *
1
I
CC1
Byte
Word
Byte
Word
16
18
4
4
30
mA
mA
V
CC
Active Current *
2
I
CC2
mA
V
CC
Current (Standby)
I
CC3
1
5
μ
A
V
CC
Current (Standby, Reset)
I
CC4
1
5
μ
A
V
CC
Current
(Automatic Sleep Mode) *
5
I
CC5
1
5
μ
A
V
CC
Active Current *
6
(Read-While-Program)
I
CC6
CE
=
V
IL
, OE
=
V
IH
Byte
Word
Byte
Word
46
48
46
48
mA
V
CC
Active Current *
6
(Read-While-Erase)
V
CC
Active Current
(Erase-Suspend-Program)
Input Low Level
Input High Level
Voltage for Autoselect and Sector
Protection (A
9
, OE, RESET) *
3,
*
4
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration *
4
Output Low Voltage Level
I
CC7
CE
=
V
IL
, OE
=
V
IH
mA
I
CC8
CE
=
V
IL
, OE
=
V
IH
40
mA
V
IL
V
IH
0.5
2.0
0.6
V
V
V
CC
+
0.3
V
ID
11.5
12
12.5
V
V
ACC
8.5
9.0
9.5
V
V
OL
V
OH1
V
OH2
V
LKO
I
OL
=
4 mA, V
CC
=
V
CC
Min
I
OH
=
2.0 mA, V
CC
=
V
CC
Min
I
OH
=
100
μ
A
2.4
2.4
0.45
2.5
V
V
V
V
Output High Voltage Level
V
CC
0.4
2.3
Low V
CC
Lock-Out Voltage
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL64DF70TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL800BA 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29DL800BA-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29DL800BA-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29DL800BA-70PBT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT
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