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參數資料
| 型號： | MBM29DL64DF70PBT |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| 中文描述： | 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | PLASTIC, FBGA-48 |
| 文件頁數： | 33/68頁 |
| 文件大?。?/td> | 854K |
| 代理商： | MBM29DL64DF70PBT |
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MBM29DL64DF
-70
33
HiddenROM
Program Command
To program the data to the HiddenROM area, write the HiddenROM program command sequence during Hid-
denROM mode. This command is the same with the usual program command, except that it needs to write the
command during HiddenROM mode. Therefore the detection of completion method is the same, using the DQ
7
data polling, DQ
6
toggle bit and RY/BY pin. You should pay attention to the address to be programmed. If an
address not in the HiddenROM area is selected, the previous data is deleted.
HiddenROM
Protect Command
There are two methods to protect the HiddenROM area. One of them is to write the sector group protect setup
command (60h) , set the sector address in the HiddenROM area and (A
6
, A
3
, A
2
, A
1
, A
0
)
=
(0, 0, 0, 1, 0) , and
write the sector group protect command (60h) during the HiddenROM mode. The same command sequence is
used because it is the same with the extension sector group protect, except that it is in the HiddenROM mode
and does not apply high voltage to the RESET pin. Refer to “Extended Sector Group Protection” for details of
extension sector group protect setting.
The other method is to apply high voltage (V
ID
) to A
9
and OE, set the sector address in the HiddenROM area
and (A
6
, A
3
, A
2
, A
1
, A
0
)
=
(0, 0, 0, 1, 0) , and apply the write pulse during the HiddenROM mode. To verify the
protect circuit, apply high voltage (V
ID
) to A
9
, specify (A
6
, A
3
, A
2
, A
1
, A
0
)
=
(0, 0, 0, 1, 0) and the sector address
in the HiddenROM area, and read. When “1” appears on DQ
0
, the protect setting is completed. “0” will appear
on DQ
0
if it is not protected. Apply write pulse again. The same command sequence is used for the above method
because other than the HiddenROM mode, it is the same method with the sector group protect previously
mentioned. Refer to Secor Group Protection for details of the sector group protect setting.
Take note that other sector groups are affected if an address other than those for the HiddenROM area is selected
for the sector group address. Pay close attention that once it is protected, protection CANNOT BE CANCELLED.
Write Operation Status
Details in “Hardware Sequence Flags” are all the status flags which determine the status of the bank for the
current mode operation. The read operation from the bank which does not operate Embedded Algorithm returns
data of memory cells. These bits offer a method for determining whether an Embedded Algorithm is properly
completed. The information on DQ
2
is address-sensitive. This means that if an address from an erasing sector
is consecutively read, the DQ
2
bit will toggle. However, DQ
2
will not toggle if an address from a non-erasing
sector is consecutively read. This allows users to determine which sectors are in erase.
The status flag is not output from banks (non-busy banks) that do not execute Embedded Algorithms. For example
a bank (busy bank) is executing an Embedded Algorithm. When the read sequence is [1]
<
busy bank
>
, [2]
<
non-busy bank
>
, [3]
<
busy bank
>
, the DQ
6
toggles in the case of [1] and [3]. In case of [2], the data of memory
cells are output. In the erase-suspend read mode with the same read sequence, DQ
6
will not be toggled in [1]
and [3].
In the erase suspend read mode, DQ
2
is toggled in [1] and [3]. In case of [2], the data of memory cell is output.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29DL64DF70TN | FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800TA | 8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000ucd; Viewing Angle:16 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to +85 C; Color:Red; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29DL800BA-90 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Yellow; Luminous Intensity:2500ucd; Viewing Angle:15 ; Forward Current:20mA; Forward Voltage:2.1V; Operating Temperature Range:-40 C to +85 C; Color:Yellow; Leaded Process Compatible:Yes RoHS Compliant: Yes |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBM29DL64DF70TN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT |
| MBM29DL800BA | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT |
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