參數(shù)資料
型號(hào): MBM29DL64DF70PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
中文描述: 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝: PLASTIC, FBGA-48
文件頁(yè)數(shù): 44/68頁(yè)
文件大?。?/td> 854K
代理商: MBM29DL64DF70PBT
MBM29DL64DF
-70
44
I
ERASE AND PROGRAMMING PERFORMANCE
Notes : Typical Erase conditions T
A
=
+
25
°
C, V
CC
=
2.9 V
Typical Program conditions T
A
=
+
25
°
C, V
CC
=
2.9 V, Data
=
Checker
I
TSOP (1) PIN CAPACITANCE
Notes :
Test conditions T
A
=
+
25
°
C, f
=
1.0 MHz
DQ
15
/A
-1
pin capacitance is stipulated by output capacitance.
I
FBGA PIN CAPACITANCE
Notes :
Test conditions T
A
=
+
25
°
C, f
=
1.0 MHz
DQ
15
/A
-1
pin capacitance is stipulated by output capacitance.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Sector Erase Time
0.5
2.0
s
Excludes programming time
prior to erasure
Word Programming Time
6.0
100
μ
s
μ
s
Excludes system-level
overhead
Byte Programming Time
4.0
80
Chip Programming Time
200
s
Excludes system-level
overhead
Program/Erase Cycle
100,000
cycle
Parameter
Symbol
Condition
Value
Unit
Typ
Max
Input Capacitance
C
IN
V
IN
=
0
V
OUT
=
0
V
IN
=
0
V
IN
=
0
6.0
10.0
pF
Output Capacitance
C
OUT
8.5
12.0
pF
Control Pin Capacitance
C
IN2
8.0
11.0
pF
WP/ACC Pin Capacitance
C
IN3
9.0
12.0
pF
Parameter
Symbol
Condition
Value
Unit
Typ
Max
Input Capacitance
C
IN
V
IN
=
0
V
OUT
=
0
V
IN
=
0
V
IN
=
0
6.0
10.0
pF
Output Capacitance
C
OUT
8.5
12.0
pF
Control Pin Capacitance
C
IN2
8.0
11.0
pF
WP/ACC Pin Capacitance
C
IN3
9.0
12.0
pF
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