參數(shù)資料
型號(hào): MBM29DL64DF70PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
中文描述: 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝: PLASTIC, FBGA-48
文件頁(yè)數(shù): 41/68頁(yè)
文件大小: 854K
代理商: MBM29DL64DF70PBT
MBM29DL64DF
-70
41
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Note : Test Conditions :
Output Load : 30 pF (MBM29DL64DF
-70
)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V or V
CC
Timing measurement reference level
Input : 0.5
×
V
CC
Output : 0.5
×
V
CC
Parameter
Symbol
Condition
Value (Note)
Unit
JEDEC
Standard
Min
Max
Read Cycle Time
t
AVAV
t
RC
70
ns
Address to Output Delay
t
AVQV
t
ACC
CE
=
V
IL
OE
=
V
IL
OE
=
V
IL
70
ns
Chip Enable to Output Delay
t
ELQV
t
CE
70
ns
Output Enable to Output Delay
t
GLQV
t
OE
30
ns
Chip Enable to Output High-Z
t
EHQZ
t
DF
25
ns
Output Enable to Output High-Z
t
GHQZ
t
DF
25
ns
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
t
AXQX
t
OH
0
ns
RESET Pin Low to Read Mode
t
READY
20
μ
s
CE to BYTE Switching Low or High
t
ELFL
t
ELFH
5
ns
C
L
3.3 V
Diodes
=
1
N3064
or Equivalent
2.7 k
Device
Under
Test
1
N3064
or Equivalent
6.2 k
Test Conditions
Notes: C
L
=
30 pF including jig capacitance (MBM29DL64DF-70)
In case of C
L
= 100 pF, the device can be operated at an access time of 80 ns.
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